• J. –S. Shim, J. -H. Lim, D. -M. Geum, J. -B. You, H. Yoon, J. Kim, W. -J. Baek, J. -H. Han, S. -H. Kim*, “ TiOx/Ti/TiOx Tri-layer Film-based Waveguide Bolometric Detector for On-chip Si Photonic Sensor”, IEEE Transactions on Electron Devices, in press (Special issue for the extended paper of International Electron Devices Meeting (IEDM), recognized as the top-ranked student papers in IEDM 2021)

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• J. Jang, D. -M. Geum, S. -H. Kim*, "Broadband Au/n-GaSb Schottky photodetector array with a spectral range from 300 nm to 1700 nm", Optics Express 29, p. 38894 (2021)

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• H. -J. Lee, A. Jang, Y. H. Kim, H. Jung, P. Bidenko, S. -H. Kim, M. Kim, J. Nah*, "Comparative advantages of type-II superlattice barrier over AlGaSb barrier for enhanced performance of InAs/GaSb LWIR nBn photodetectors", Optics Letters 46, p. 3877 (2021)

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• Y. Kim, J. -H. Han*, D. -H. Ahn, S. -H. Kim, "Heterogeneously-integrated optical phase shifters for next-generation modulators and switches on a Silicon photonics platform: A review", Micromachines 12, p. 625 (2021)

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• J. Shim, J. Lim, D. -M. Geum, B. H. Kim, S. -Y. Ahn, S. -H. Kim*, "Tailoring bolometric properties of a TiOx/Ti/TiOx tri-layer film for integrated optical gas sensors", Optics Express 29, p. 18037 (2021)

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• D. -M. Geum, S. -K. Kim, H. -R. Lim, J. Park, J. Jeong, J. H. Han, W. J. Choi, H. -J. Kim, S. -H. Kim*, "Electrical analysis for wafer-bonded interfaces of p+GaAs/n+InGaAs and p+InGaAs/n+InGaAs", IEEE Electron Device Letters 41, p. 800 (2021)

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• W. Kim^, P. Bidenko^, J. Kim, J. Sim, J. -K. Han, S. -K. Kim, D. -M. Geum, S. -H. Kim*, Y. -K. Choi*, "Vertical InGaAs Biristor for sub-1V Operation", IEEE Electron Device Letters 42, p. 681 (2021) (selected as Editors' Picks)

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• J. Jang^, J. Song^, S. S. Lee, S. Jeong, B. J. Lee*, S. -H. Kim*, "Analysis of temperature-dependent I-V characteristics of the Au/n-GaSb Schottky diode", Materials Science in Semiconductor Processing 131, 105882 (2021)

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• J. Jeong, S. -K. Kim, J. Kim, D. -M. Geum, J. Park, J. -H. Jang, S. -H. Kim*, "Stackable InGaAs-On-Insulator HEMTs for Monolithic 3D Integration", IEEE Transactions on Electron Devices 68, p. 2205 (2021) (featured in SemiconductorTODAY)

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• D. -M. Geum^, S. Kim^, J. Khym, J. Lim, S. -K. Kim, S. -Y. Ahn, T. S. Kim, K. Kang*, S. -H. Kim*, "Arrayed MoS2-In0.53Ga0.47As van der Waals Heterostructure for High-speed and Broadband Detection from Visible to Shortwave-infrared Light", Small 17, 2007357 (2021) (selected as a back cover)

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• S. -H. Kim^, I. -P. Roh^, J. -H. Han, D. -M. Geum, S. K. Kim, S. -S. Kang, H. -K. Kang, W. C. Lee, S. K. Kim, D. K. Hwang, Y. H. Song*, J. D. Song*, "High hole mobility and low leakage thin-body (In)GaSb p-MOSFETs grown on high-bandgap AlGaSb", IEEE Journal of the Electron Device Society 9, p. 42 (2021)

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• N. Hong, D. -M. Geum, T. Kim, S. -Y. Ahn, J. -H. Han, D. Jung, G. H. Ryu, S- H. Kim, K .J. Yu*, W. J. Choi*, "Flexible GaAs Photodetectors with Ultrathin Thermally Grown Silicon Dioxide as a Long-lived Barrier for Chronic Biomedical Implants", Advanced Photonics Research 2, 2000051 (2021)​