Journal papers published in 2012

  • S. Takagi*, N. Taoka, R. Suzuki, M. Yokoyama, S.-H. Kim, and M. Takenaka : “InGaAs MOS gate stack formation and the MOS interface properties”, Journal of The Surface Science Society of Japan, Vol 33, No. 11, pp. 628, 2012 (Japanese)

  • R. Suzuki*, N. Taoka, M. Yokoyama, S. H. Kim, T. Hoshii, T. Maeda, T. Yasuda, O. Ichikawa, N. Fukuhara, M. Hata, M. Takenaka, and S. Takagi : “Impact of atomic layer deposition temperature on HfO2/InGaAs metal-oxide-semiconductor interface properties”, Journal of Applied Physics, Vol 112, 084103, 2012

  • Cezar B. Zota*, S. H. Kim, M. Yokoyama, M. Takenaka, and S. Takagi : “Characterization of Ni–GaSb Alloys Formed by Direct Reaction of Ni with GaSb”, Applied Physics Express, Vol 5, 071201, 2012

  • M. Yokoyama*, S.-H. Kim, R. Zhang, N. Taoka, Y. Urabe, T. Maeda, H. Takagi, T. Yasuda, H. Yamada, O. Ichikawa, N. Fukuhara, M. Hata, M. Sugiyama, Y. Nakano, M. Takenaka and S. Takagi : “III-V/Ge high mobility channel integration of InGaAs nMOSFETs and Ge pMOSFETs with self-align Ni-based metal S/D”, Applied Physics Express, Vol. 5, 076501, 2012

  • S. H. Kim*, M. Yokoyama, N. Taoka, R. Nakane, T. Yasuda, H. Yamada, N. Fukuhara, M. Hata, M. Takenaka and S. Takagi : “Strained In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors with epitaxial based biaxial strain”, Applied Physics Letters, Vol 100, 193510 , 2012

  • R. Suzuki*, N. Taoka, M. Yokoyama, S. Lee, S. H. Kim, T. Hoshii, T. Yasuda, W. Jevasuwan, T. Maeda, O. Ichikawa, N. Fukuhara, M. Hata, M. Takenaka, and S. Takagi : “1-nm-capacitance-equivalent-thickness HfO2/Al2O3/InGaAs metal-oxidesemiconductor structure with low interface trap density and low gate leakage current density”, Applied Physics Letters, Vol 100, 132906, 2012

  • R. Iida*, S. H. Kim, M. Yokoyama, N. Taoka, S. Lee, M. Takenaka, S. Takagi : “Planar-type In0.53Ga0.47As channel band-to-band tunneling metal-oxide-semiconductor field-effect transistors”, Journal of Applied Physics, Vol. 110, 124505, 2011

  • S. H. Kim*, M. Yokoyama, N. Taoka, R. Iida, S. Lee, R. Nakane, Y. Urabe, N. Miyata, T. Yasuda, H. Yamada, N. Fukuhara, M. Hata, M. Takenaka and S. Takagi : “In0.53Ga0.47As Metal-oxide-semiconductor Field-effect Transistors with Self-Aligned Metal Source/Drain using Co-InGaAs Alloys”, Applied Physics Letters, Vol 100, 073504, 2012

  • S. H. Kim*, M. Yokoyama, N. Taoka, R. Iida, S. Lee, R. Nakane, Y. Urabe, N. Miyata, T. Yasuda, H. Yamada, N. Fukuhara, M. Hata, M. Takenaka and S. Takagi : “Electron Mobility Enhancement of Extremely Thin Body In0.7Ga0.3As-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors on Si Substrates by Metal-Oxide-Semiconductor Interface Buffer Layers”, Applied Physics Express, Vol 5, 014201, 2012

kaist_logo.png
kaistee.png

34141 대전광역시 유성구 대학로 291 한국과학기술원(KAIST) 전기 및 전자공학부 E3-2, 1230호
TEL : 042-350-7552

© 2020 3D Integrated Opto-Electronic Device Laboratory.  All rights reserved.