Journal papers published in 2013

  • N. Taoka*, M. Yokoyama, S. -H. Kim, R. Suzuki, S. Lee, R. Iida, T. Hoshii, W. Jevasuwan, T. Maeda, T. Yasuda, O. Ichikawa, N. Fukuhara, M. Hata, M. Takenaka, and S. Takagi, “Impact of Fermi level pinning due to interface traps inside conduction band on the inversion-layer mobility in InxGa1-xAs metal-oxide-semiconductor field effect transistors”, IEEE Transactions on device and materials reliability, Vol 13, p. 456, 2013

  • S. -H. Kim*, M. Yokoyama, R. Nakane, O. Ichikawa, T. Osada, M. Hata, M. Takenaka and S. Takagi : “Biaxially strained Extremely-thin Body In0.53Ga0.47As-On-Insulator MOSFETs on Si substrates and Physical Understanding on their electron mobility”, Journal of Applied Physics 114, 164512, 2013

  • N. Taoka*, M. Yokoyama, S. -H. Kim, R. Suzuki, S. Lee, R. Iida, T. Hoshii, W. Jevasuwan, T. Maeda, T. Yasuda, O. Ichikawa, N. Fukuhara, M. Hata, M. Takenaka, and S. Takagi, “Impact of Fermi level pinning inside conduction band on electron mobility in InGaAs metal-oxide-semiconductor field-effect transistors”, Applied Physics Letters, Vol 103, 143509, 2013

  • S. -H. Kim*, M. Yokoyama, R. Nakane, O. Ichikawa, T. Osada, M. Hata, M. Takenaka and S. Takagi : “High Performance InAs-On-Insulator nMOSFETs With Ni-InGaAs S/D Realized by Contact Resistance Reduction Technology”, IEEE Transactions on electron device, Vol 60, p. 3342, 2013

  • M. Yokoyama*, R. Iida, Y. Ikku, S.-H. Lee, S.-H. Kim, N. Taoka, Y. Urabe, T. Yasuda, H. Takagi, H. Yamada, N. Fukuhara, M. Hata, M. Sugiyama, Y. Nakano, M. Takenaka and S. Takagi, “Formation of III-V-On-Insulator Structures on Si by Direct Wafer Bonding”, Semiconductor Science and Technology 28, 094009, 2013

  • S. -H. Kim*, M. Yokoyama, N. Taoka, R. Nakane, T. Yasuda, O. Ichikawa, N. Fukuhara, M. Hata, M. Takenaka and S. Takagi : “Sub-60 nm Extremely-thin Body InxGa1-xAs-On-Insulator MOSFETs on Si with Ni-InGaAs Metal S/D and MOS Interface Buffer Engineering and its scalability”, IEEE Transactions on electron device, Vol 60, p. 2512, 2013

  • S. -H. Kim*, M. Yokoyama, N. Taoka, R. Iida, S.-H. Lee, R. Nakane, Y. Urabe, N. Miyata, T. Yasuda, H. Yamada, N. Fukuhara, M. Hata, M. Takenaka and S. Takagi : “Experimental Study on Electron Mobility in InxGa1-xAs-on-insulator Metal-Oxide-Semiconductor Field-Effect Transistors with In content modulation and MOS interface buffer engineering”, IEEE Transactions on Nanotechnology, Vol 12, p. 621, 2013

  • C.-Y. Chang*, M. Yokoyama, S.-H. Kim, O. Ichikawa, T. Osada, M. Hata, M. Takenaka, and S. Takagi : “Impact of metal gate electrodes on electrical properties of InGaAs MOS gate stacks”, Microelectronic Engineering, Vol 109, p. 28, 2013

  • S. Takagi*, S.-H. Kim, M. Yokoyama, R. Zhang, N. Taoka, Y. Urabe, T. Yasuda, H. Yamada, O. Ichikawa, N. Fukuhara, M. Hata and M. Takenaka : “High Mobility CMOS Technologies using III-V/Ge Channels on Si platform”, Solid State Electronics 88, p. 2, 2013

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