Patents

  • Korean Patent 10-1873255, “Method for manufacturing semiconductor device by epitaxial lift-off using plane dependency of III-V compound,” June 26, 2018

  • U.S. Patent 2018-10014216, “Method for manufacturing semiconductor device using high speed epitaxial lift-off and template for III-V direct growth and semiconductor device manufactured using the same,” March 26, 2018

  • U.S. Patent 2018-9941168, “Method for manufacturing semiconductor device by epitaxial lift-off using plane dependency of III-V compound,” January 29, 2018

  • Korean Patent 10-1743017, “Method for manufacturing semiconductor device using high speed epitaxial lift-off and template for III-V direct growth and semiconductor device manufactured using the same,” March 2, 2017

  • Korean Patent 10-1803290, “Infrared Absorver Element Including Thin Film Infrared Absorber material,” November 24, 2017

  • Korean Patent 10-1684947, “ZnO nanosheet Anti-reflection coating based on ultrathin Al and its solar cell,” December 5, 2016

  • Korean Patent 10-1684383, “Thin film Infrared absorber material structure design and fabrication,” December 2, 2016

  • Korean Patent 10-1665309, “Method of Fabricating Phtovoltaic/Thermoelectric Hybrid Generator,” October 6, 2016

  • Chinese Patent ZL201280024791.0, “Semiconductor device, semiconductor substrate, method for producing semiconductor substrate, and method for producing semiconductor device,” March 23, 2016

  • Taiwanese Patent I528548, “Semiconductor Substrate and method of producing same,” April 1, 2016

  • Chinese Patent ZL201280009842.2, “Semiconductor substrate and method of producing same,” March 9, 2016

  • Japanese Patent 5674106, “Semiconductor device, method of producing same and integrated circuits,” January 9, 2015

  • U.S. Patent 8901656, “Semiconductor substrate and method of producing same,” December 2, 2014

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34141 대전광역시 유성구 대학로 291 한국과학기술원(KAIST) 전기 및 전자공학부 E3-2, 1230호
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