• S. H. Kim*, Y. Ikku, M. Yokoyama, R. Nakane, J. Li, Y. C. Kao, M. Takenaka and S. Takagi : “Direct Wafer Bonding Technology for Large-scale InGaAs-On-Insulator Transistors”, Applied Physics Letters, Vol 104, 043504, 2014

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• S. H. Kim*, M. Yokoyama, R. Nakane, O. Ichikawa, T. Osada, M. Hata, M. Takenaka and S. Takagi : “Experimental study on vertical scaling of InAs-on-insulator metal-oxide-semiconductor field-effect transistors”, Applied Physics Letters, Vol 104, 263507, 2014

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• S. -H. Kim*, M. Yokoyama, R. Nakane, O. Ichikawa, T. Osada, M. Hata, M. Takenaka and S. Takagi : “High Performance Tri-gate Extremely-thin-Body InAs-on-Insulator MOSFETs with high short channel effect immunity and Vth tunability”, IEEE Transactions on electron device, Vol 61, p. 1354, 2014

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• S. H. Kim*, M. Yokoyama, Y. Ikku, R. Nakane, O. Ichikawa, T. Osada, M. Hata, M. Takenaka and S. Takagi : “Physical understanding of electron mobility in asymmetrically strained InGaAs-on-insulator metal-oxide-semiconductor field-effect transistors fabricated by lateral strain relaxation”, Applied Physics Letters, Vol 104, 113509, 2014

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• M. Yokoyama*, K. Nishi, S. -H. Kim, H. Yokoyama, M. Takenaka and S. Takagi, “Self-aligned Ni–GaSb source/drain junctions for GaSb p-channel metal-oxide- semiconductor field-effect transistors”, Applied Physics Letters, Vol 104, 093509, 2014

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• K. Nishi*, M. Yokoyama, S. -H. Kim, H. Yokoyama, M. Takenaka, and S. Takagi, “Study on electrical properties of metal/GaSb junctions using metal-GaSb alloys”, Journal of Applied Physics, Vol. 115, 034515, 2014

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• M.-S. Kim*, Y.-H Kim, M. Yokoyama, R. Nakane, S.-H. Kim, M. Takenaka and S. Takagi, “Tunnel Field-Effect Transistors with Germanium/Strained-Silicon Hetero-junctions for Low Power Applications”, Thin Solid Films, Vol 557, p. 298, 2014