Conferences

*Corresponding authorship

<2020>

  • [Invited paper] S. -H. Kim*, "Monolithic 3D technology for optoelectronic applications", The 6th International Conference on Electronic Materials and Nanotechnology for Green Environment (ENGE), 2020/11, Korea

  • [Invited paper] S. -H. Kim*, D, -M. Geum, "Toward ultra-high-resolution Micro/Nano-LED display", The 20th International Meeting on Information Display (IMID), 2020/8, Korea

<2019>

  • Y. Kim, S. -H. Kim, Y. Ban, D. Yudistira, M. Pantouvaki, Joris V. Campenhout, "Proposal and simulation of a low loss, highly efficient monolithic III-V/Si optical phase shifter", Group Four Photonics (GFP), 2019/8, Singapore

  • D. -M. Geum, S. -H. Kim (co-first), S. -K. Kim, S. -S. Kang, J. -H. Kyhm, J. -D. Song, W. J. Choi*, and E. Yoon*, "Monolithic integration of GaAs//InGaAs photodetectors for multicolor detection", Symposium on VLSI Technology (2019), 2019/6, Kyoto, Japan

<2018>

  • J. -H. Han (co-first)*, P. Bidenko (co-first), J. D. Song, and S.- H. Kim*, "Numerical Study on Modulation Efficiency Enhancement of SIS Optical Phase Shifter Using Negative Capacitance Effect", The 8th International Symposium on Photonics and Electronics Convergence (ISPEC), 2018/12, Tokyo, Japan

  • S.- H. Kim*, S. –K. Kim, S. –H. Shin, J. –H. Han, D. –M. Geum, J. –P. Shim, S. Lee, H. –S. Kim, G. Ju, J. –D. Song, M. A. Alam, H. –J. Kim, “Heat Shunting by Innovative Source/Drain Contact to Enable Monolithic 3D Integration of InGaAs MOSFETs”, IEEE S3S conference, 2018/10, San Francisco, USA

  • I. Roh, S. –H. Kim*, J. Han, D. –M. Geum, S. –K. Kim, S. Kang, H. –K. Kang, W. Lee, S. K. Kim, D. Hwang, Y. Song, J. –D. Song, “Low leakage current and High mobility Ultra-thin-body InGaSb p-FETs”, 2018 International conference on Solid State Devices and Materials (SSDM), 2018/9, The University of Tokyo, Japan

  • J. -H. Han (co-first)*, P. Bidenko (co-first), J. D. Song, and S. -H. Kim* : "Feasibility study on negative capacitance SIS phase shifter for low-power optical phase modulation", Group Four Photonics (GFP), 2018/8, Cancun, Maxico

  • J. -H. Han*, H- J. Kim, W. J. Choi, J. D. Song, and S. -H. Kim* : "Design of efficient phase shifter using InGaAs-InAs/Ge SIS capacitor for mid-IR photonics application", Group Four Photonics (GFP), 2018/8, Cancun, Maxico

  • [Invited paper] S. -H. Kim* : "Heterogeneous integration technology for 3D opto-electronic integrated circuits", 40th Progress In Electromagnetics Research Symposium (PIERS), 2018/7, Toyama, Japan

  • B. Kunert*, M. Baryshnikova, Y. Mols, Y. Shi, D. V. Thourhout, N. Kuznetsova, S. –H. Kim, Cenk I. Ozdemir, M. Pantouvaki, J. V. Campenhout, R. Langer : “III-V photonic devices on Si”, 9th International SiGe Technology and Device Meeting (ISTDM) / 11th International Conference on Silicon Epitaxy and Heterostructures (ICSI), 2018/5, Potsdam, Germany

<2017>

  • S. -H. Kim*, D. -M. Geum, M. -S. Park, C. Z. Kim, and W. J. Choi : “GaAs solar cell on Si substrate Realized by wafer bonding”, Global PhotoVoltaic Coference (GPVC), 2017/3, GwangJu, Korea

  • [Invited paper] S. -H. Kim*, S. -K. Kim, J. -P. Shim, D. -M. Geum, G. Ju, H. -S. Kim, H. -J. Lim, H. -R. Lim, J. -H. Han, C. -M. Kang, D. -S. Lee, J. -D. Song, W. J. Choi, H. -J. Kim, “Heterogeneous Integration toward Monolithic 3D Chip”, IEEE S3S conference, 2017/10, San Francisco, USA

  • [Invited paper] S Takagi*, DH Ahn, T Gotow, M Noguchi, K Nishi, S -H. Kim, M Yokoyama, C-Y Chang, S-H Yoon, C Yokoyama, M Takenaka : “III–V-based low power CMOS devices on Si platform”, 2017 IEEE International Conference on IC Design and Technology (ICICDT), 2017/5, Texas, USA

  • W. Lu*, I. P. Roh, D. –M. Geum, S. –H. Kim, J. D. Song, L. Kong, and J. A. del Alamo : “10-nm Fin-Width InGaSb p-Channel Self-Aligned FinFETs Using Antimonide-Compatible Digital Etch”, 2017 International Electron Devices Meeting (IEDM), 2017/12, San Francisco, CA, USA, p. 433

<2016>

  • [Best Paper Award] S. -H. Kim*, D. -M. Geum, S. -K. Kim, H. -J. Kim, J. -D. Song, and W. J. Choi : “High-speed epitaxial lift-off for III-V-on-insulator transistors on Si substrates”, IEEE S3S conference, 2016/10, San Francisco, USA

  • S. -H. Kim*, D. -M. Geum, M. -S. Park, H. -S. Kim, J. -D. Song, and W. J. Choi : “Fabrication and characterization of GaAs pin photodetector array on Si”, International Symposium on Photonics and Electronics Convergence (ISPEC), 2016/11, Tokyo, Japan

  • S. H. Shin* (co-first), S. –H. Kim (co-first), S. Kim, H. Wu, P. D. Ye, and M. A. Alam* : “Substrate and Layout Engineering to Suppress Self-heating in Floating Body Transistors”, 2016 International Electron Devices Meeting (IEDM), 2016/12, San Francisco, CA, USA, p. 404

  • D. -M. Geum, M.-S. Park, C. –Z. Kim, S. –H. Kim*, W. J. Choi*, and E. Yoon : “Influence of Light Concentration on GaAs Solar Cell on Cu Substrate”, The 18th International Symposium on the Physics of Semiconductors and Applications (ISPSA), 2016/7, Jeju, Korea, M-P-011

  • H. –S. Kim, M. –H. Park, M. –S. Park, S. –H. Kim, J. –H. Kyhm, J. –D. Song, S. –H. Kim, W. J. Choi*, and J. –H. Park* : “Effects of hydrogen plasma treatment on the various structure of the InAs/GaAs quantum dot solar cells”, The 18th International Symposium on the Physics of Semiconductors and Applications (ISPSA), 2016/7, Jeju, Korea, M-P-018

  • S. -K. Kim, J. -P. Shim, D. -M. Geum, C. Z. Kim, H. -S. Kim, Y. -S. Kim, H. -K. Kang, J. D. Song, S. -J. Choi, D. H. Kim, W. J. Choi, H. -J. Kim, D. M. Kim*, and S. -H. Kim* : “Cost-effective Fabrication of In0.53Ga0.47As-on-Insulator on Si for Monolithic 3D via Novel Epitaxial Lift-Off (ELO) and Donor Wafer Re-use”, 2016 International Electron Devices Meeting (IEDM), 2016/12, San Francisco, CA, USA, p. 616

<2015>

  • [Invited paper] S. Takagi*, S. -H. Kim, Y. Ikku, M. Yokoyama, R. Nakane, J. Li, Y. -C. Kao, M. Takenaka : “High Performance III-V-on-Insulator MOSFETs on Si Realized by Direct Wafer Bonding Applicable to Large Wafer Size” 227th ECS Meeting, 2015/10

  • [Invited paper] M. Takenaka*, Y. Kim, J. Han, J. Kang, Y. Ikku, Y. Cheng, J.-K. Park, S. -H Kim, and S. Takagi : “CMOS photonics technologies based on heterogeneous integration of SiGe/Ge and III-V”, 2015 International Electron Devices Meeting (IEDM), 2015/12, Washington, DC, USA

<2014>

  • S. H. Kim*, Y. Ikku, M. Yokoyama, R. Nakane, J. Li, Y. C. Kao, M. Takenaka, and S. Takagi, “High Performance InGaAs-On-Insulator MOSFETs on Si by Novel Direct Wafer Bonding Technology applicable to Large Wafer Size Si”, Symposium on VLSI Technology (2014), 2014/6, Hawai, USA, p. 32

  • S. -H. Kim*, M. -S. Park, D. -M. Geum, H. D. Yang, H. S. Kim, G. H. Ryu, J. D. Song, C. Z. Kim, and W. J. Choi : “Fabrication and characterization of GaAs solar cell on Si substrate”, The 17th International Symposium on the Physics of Semiconductors and Applications (ISPSA), 2014/12, Jeju, Korea, M-P-025

  • [Invited paper] S. Takagi*, S.-H. Kim, M. Yokoyama, K. Nishi, R. Zhang, and M. Takenaka : “Material Challenges and Opportunities in Ge/III-V channel MOSFETs”, 226th ECS Meeting, 2014/10, Cancun, Maxico

  • M. -S. Park, H. D. Yang, D. M. Geum, J. D. Song, S. H. Kim, S. -H. Kim, and W. J. Choi* : “Photovoltaic InAs/GaAs p-i-n Quantum Dot Infrared Photodetectors Operating at High-temperature”, The 17th International Symposium on the Physics of Semiconductors and Applications (ISPSA), 2014/12, Jeju, Korea, T-P-065

<2013>

  • S. H. Kim*, M. Yokoyama, R. Nakane, O. Ichikawa, T. Osada, M. Hata, M. Takenaka and S. Takagi, “Analysis on channel thickness fluctuation scattering in InGaAs-OI MOSFETs”, IPRM (2013), 2013/5, Kobe, Japan, WeD1-3

  • S. H. Kim*, M. Yokoyama, R. Nakane, O. Ichikawa, T. Osada, M. Hata, M. Takenaka and S. Takagi, “Strained Extremely-thin Body In0.53Ga0.47As-On-Insulator MOSFETs on Si substrates”, Symposium on VLSI Technology (2013), 2013/6, Kyoto, Japan, p. T50

  • S. H. Kim*, M. Yokoyama, R. Nakane, O. Ichikawa, T. Osada, M. Hata, M. Takenaka and S. Takagi, “High Performance Extremely-thin Body InAs-On-Insulator MOSFETs on Si with Ni-InGaAs Metal S/D by Contact Resistance Reduction Technology”, Symposium on VLSI Technology (2013), 2013/6, Kyoto, Japan, p. T52

  • S. -H. Kim*, M. Yokoyama, Y. Ikku, R. Nakane, O. Ichikawa, T. Osada, M. Hata, M. Takenaka, and S. Takagi, “Physical understanding of electron mobility in uniaxially strained InGaAs-OI MOSFETs”, 43rd European Solid-State Device Research Conference (ESSDERC), 2013/9, Bucharest, Romania, B4L-A1

  • S. H. Kim*, M. Yokoyama, R. Nakane, O. Ichikawa, T. Osada, M. Hata, M. Takenaka and S. Takagi : “High performance sub-20-nm-channel-length extremely-thin body InAs-on-insulator Tri-gate MOSFETs with high short channel effect immunity and Vth tunability”, 2013 International Electron Devices Meeting (IEDM), 2013/12, Washington, DC, USA, p. 429

  • [Invited paper] S. Takagi*, R. Zhang, N. Taoka, R. Suzuki, S.-H. Kim, M. Yokoyama, and M. Takenaka, “MOS interface control in III-V/Ge gate stacks and the impact on MOSFET performance”, The spring MRS symposium S13, 2013/4, San Francisco, California, USA, CC1.04

  • [Invited paper] S. Takagi*, M. Yokoyama, S.-H. Kim, R. Zhang, R. Suzuki, N. Taoka, and M. Takenaka, “III-V/Ge CMOS device technologies for high performance logic applications”, 223rd ECS Meeting 53, p. 85 2013/5, Toronto, Canada

  • [Invited paper] S. Takagi*, S.-H. Kim, R. Zhang, N. Taoka, M. Yokoyama, and M. Takenaka, “Limiting factors of channel mobility in III-V/Ge MOSFETs”, 223rd ECS Meeting 53, p. 97, 2013/5, Toronto, Canada

  • C.-Y. Chang*, M. Yokoyama, S.-H. Kim, O. Ichikawa, T. Osada, M. Hata, M. Takenaka, and S. Takagi, “Impact of metal gate electrodes on electrical properties of InGaAs MOS gate stacks”, 18th Conference on "Insulating Films on Semiconductors", 2013/6, Cracow, Poland

  • Minsoo Kim*, Younghyun Kim, Masafumi Yokoyama, Ryosho Nakane, SangHyeon Kim, Mitsuru Takenaka and Shinichi Takagi, “Tunnel Field-Effect Transistors with Germanium/Strained-Silicon Hetero-junctions for Low Power Applications”, 8th International Conference on Silicon Epitaxy and Heterostructures (ICSI), 2013/6, Fukuhoka, Japan, P1-26

  • [Invited paper]S. Takagi*, R. Zhang, R. Suzuki, C.-Y. Chang, N. Taoka, S.-H. Kim, M. Yokoyama and M. Takenaka, “III-V/Ge MOS Interface Control Using and High k Films”, 15th Asian Chemical Congress (15ACC), Resorts World Sentosa, Singapore, Aug 19-23, 2013

  • W. Kim*, Y. Kin, Y. Kim, S. -H. Kim, T. Osada, M. Hata, M. Takenka, and S. Takagi : “Ultra-thin body Ge-on insulator nMOSFETs fabricated by Ge condensation with S/D region formed with Sb diffusion”, Int. Conf. on Solid State Devices and Materials (2013), 2013/9, Fukuoka, Japan, p. 744

  • [Invited paper]S. Takagi*, S.-H. Kim, M. Yokoyama, W.-K. Kim, R. Zhang and M. Takenaka, “Ultra-thin body MOS device technologies using high mobility channel materials”, IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, Hyatt Regency Monterey Hotel and Spa, Monterey, California, October 7-10, 2013

  • [Invited paper]S. Takagi*, R. Zhang, S.-H. Kim, M. Yokoyama and M. Takenaka : “Performance Enhancement Technologies in III-V/Ge MOSFETs”, 224th Electrochemical Society Meeting, 2013/10, San Francisco, CA, USA, p. 137-148

  • K. Nishi*, M. Yokoyama, S. H. Kim, H. Yokoyama, M. Takenaka, and S. Takagi, “Electrical Properties of metal/GaSb junctions using metal-GaSb alloys”, 2013 Semiconductor Interface Specialists Conference (SISC), 2013/12, Arlington, Virginia, USA, 9.4

  • M. Noguchi*, S. H. Kim, M. Yokoyama, O. Ichikawa, T. Osada, M. Hata, M. Takenaka, and S. Takagi : “High Ion/Ioff and low subthreshold slope planar-type InGaAs Tunnel FETs with Zn-diffused source junctions”, 2013 International Electron Devices Meeting (IEDM), 2013/12, Washington, DC, USA, p. 683

<2012>

  • S. H. Kim*, M. Yokoyama, N. Taoka, R. Nakane, T. Yasuda, O. Ichikawa, N. Fukuhara, M. Hata, M. Takenaka and S. Takagi, “Sub-60 nm Deeply-Scaled Channel Length Extremely-thin Body InxGa1-xAs-On-Insulator MOSFETs on Si with Ni-InGaAs Metal S/D and MOS Interface Buffer Engineering”, Symposium on VLSI Technology (2012), 2012/6, Hawai, USA, p. 177

  • C. B. Zota*, S. H. Kim, Y. Asakura, M. Takenaka and S. Takagi : “Self-aligned metal S/D GaSb p-MOSFETs using Ni-GaSb alloys”, 70th Device Research Conference (DRC), June 18-20, Pennsylvenia State University, University Park, PA, USA, P. 71-72 (2012)

  • [Invited paper] S. Takagi*, S. –H. Kim, R. Zhang, M. Yokoyama, N.Taoka, and M. Takenaka : “III-V/Ge CMOS Device Technologies for High Performance and Low Power Logic Applications”, Int. Conf. on Solid State Devices and Materials (2012), Kyoto, Japan, p. 793

  • [Invited paper] S. Takagi*, R. Zhang, S. –H. Kim, N. Taoka, M. Yokoyama, J.-K. Suh, R. Suzuki, Y. Asakura, C. Zota and M. Takenaka : “MOS interface and channel engineering for high-mobility Ge/III-V CMOS”, 2012 International Electron Devices Meeting (IEDM), 2012/12, San Francisco, CA, USA, p. 505

<2011>

  • S. H. Kim*, M.Yokoyama, N.Taoka, R. Iida, S. Lee, R.Nakane, Y. Urabe, N. Miyata, T. Yasuda, H. Yamada, N. Fukuhara, M. Hata, M.Takenaka and S.Takagi, “Self-aligned metal S/D InP MOSFETs using metallic Ni-InP alloy”, IPRM (2011), 2011/5, Berlin, Germany, Tu-5.1.3.

  • [highlight paper] S. H. Kim*, M. Yokoyama, N. Taoka, R. Iida, S. Lee, R. Nakane, Y. Urabe, N. Miyata, T. Yasuda, H. Yamada, N. Fukuhara, M. Hata, M. Takenaka and S. Takagi, “High performance Extremely-thin Body III-V-On-Insulator MOSFETs on a Si substrate with Ni-InGaAs metal S/D and MOS Interface Buffer Engineering”, Symposium on VLSI Technology (2011), 2011/6, Kyoto, Japan, p. 58

  • S. H. Kim*, M. Yokoyama, N. Taoka, R. Nakane, T. Yasuda, H. Yamada, N. Fukuhara, M. Hata, M. Takenaka and S. Takagi : “Enhancement Technologies and Physical Understanding of Electron Mobility in III-V n-MOSFETs with Strain and MOS Interface Buffer Engineering”, 2011 International Electron Devices Meeting (IEDM), 2011/12, Washington, DC, USA, p. 311-314

  • N. Taoka*, M. Yokoyama, S. H. Kim, R. Suzuki, T. Hoshii, R. Iida, S. Lee, Y. Urabe, N. Miyata, T. Yasuda, H. Yamada, N. Fukuhara, M. Hata, M. Takenaka, and S. Takagi : “Impacts of (NH4)2S treatment and ALD temperature on ALD-Al2O3/InP Interface Properties”, 2011 International Workshop on Dielectric Thin Films for future electron devices, 2011/1, Tokyo Institute of Technology, Japan, p. 149-150

  • N. Taoka*, M. Yokoyama, S. H. Kim, R. Suzuki, T. Hoshii, R. Iida, S. Lee, Y. Urabe, N. Miyata, T. Yasuda, H. Yamada, N. Fukuhara, M. Hata, M. Takenaka, and S. Takagi, “Quantitative Analysis of Conductance Curves in Al2O3/InP Interfaces”, 17th Conference on "Insulating Films on Semiconductors", 2011/6, Grenoble, France

  • M. Yokoyama*, S. H. Kim, R. Zhang, N. Taoka, Y. Urabe, T. Maeda, H. Takagi, T. Yasuda, H. Yamada, O. Ichikawa, N. Fukuhara, M. Hata, M. Sugiyama, Y. Nakano, M. Takenaka and S. Takagi, “CMOS integration of InGaAs nMOSFETs and Ge pMOSFETs with self-align Ni-based metal S/D using direct wafer bonding”, Symposium on VLSI Technology (2011), T4A-3

  • [Invited paper] S. Takagi*, M. Yokoyama, S.-H. Kim and M. Takenaka, “Device and integration technologies of III-V/Ge channel CMOS”, Symposium on ULSI Process Integration 7, Symposium E4 of the 220th Electrochemical Society (ECS) Meeting, Boston, Massachusetts, on October 10-14, 2011

  • R. Suzuki*, S. Lee, S. H. Kim, T. Hoshii, M. Yokoyama, N. Taoka, T. Yasuda, W. Jevasuwan, T. Maeda, O. Ichikawa, N. Fukuhara, M. Hata, M. Takenaka, and S. Takagi : “Effect of sulfur treatment on HfO2/InGaAs MOS interfaces properties”, Int. Conf. on Solid State Devices and Materials (2011), Nagoya, Japan, p. 941.

  • R. Iida*, S. H. Kim, M. Yokoyama, N. Taoka, S. H. Lee, M. Takenaka and S. Takagi : “Device characteristics of planar-type In0.53Ga0.47As channel band-to-band tunneling MOSFETs”, Int. Conf. on Solid State Devices and Materials (2011), Nagoya, Japan, p. 843-844

  • [Invited paper] S. Takagi*, M. Yokoyama, S.-H. Kim and M. Takenaka : “Device and integration technologies of III-V/Ge channel CMOS”, Symposium on ULSI Process Integration 7, Symposium E4 of the 220th Electrochemical Society (ECS) Meeting, Boston, Massachusetts, on October 10-14, 2011, ECS Trans. 41(7) (2011) pp. 203-218

  • [Invited paper] S. Takagi*, M. Yokoyama, S.-H. Kim, N. Taoka and M. Takenaka : “Ultra-thin body III-V-On-Insulator MOSFETs on Si platform”, 15th International Conference on Thin Films (ICTF), Kyoto, Japan, 8-11, November (2011), O-S2-02, pp. 40

  • R. Suzuki*, N. Taoka, S. Lee, S. H. Kim, T. Hoshii, M. Yokoyama, T. Yasuda, W. Jevasuwan, T. Maeda, O. Ichikawa, N. Fukuhara, M. Hata, M. Takenaka, and S. Takagi : “Improvement of HfO2/InGaAs Interfaces by ALD Temperature Control”, 2011 Semiconductor Interface Specialists Conference, 2011/12, Arlington, Virginia, USA, p. 25

  • N. Taoka*, M. Yokoyama, S. H. Kim, R. Suzuki, R. Iida, S. Lee, T. Hoshii, W. Jevasuwan, T. Maeda, T. Yasuda, O. Ichikawa, N. Fukuhara, M. Hata, M. Takenaka, and S. Takagi : “Influence of Interface Traps inside Conduction Band on C-V Characteristics of InGaAs MOS Capacitors”, 2011 Semiconductor Interface Specialists Conference, 2011/12, Arlington, Virginia, USA, p.62

  • N. Taoka*, M. Yokoyama, S. H. Kim, R. Suzuki, R. Iida, S. Lee, T. Hoshii, W. Jevasuwan, T. Maeda, T. Yasuda, O. Ichikawa, N. Fukuhara, M. Hata, M. Takenaka, and S. Takagi : “Impact of Fermi Level Pinning inside Conduction Band on Electron Mobility of InxGa1-xAs MOSFETs and Mobility Enhancement by Pinning Modulation”, 2011 International Electron Devices Meeting (IEDM), 2011/12, Washington, DC, USA, p. 610-613

<2010>

  • S. H. Kim*, M. Yokoyama, N. Taoka, R. Iida, S. Lee, R. Nakane, Y. Urabe, N. Miyata, T. Yasuda, H. Yamada, N. Fukuhara, M. Hata, M. Takenaka and S. Takagi : “Self-aligned metal Source/Drain InxGa1-xAs n-MOSFETs using Ni-InGaAs alloy”, 2010 International Electron Devices Meeting (IEDM), 2010/12, San Francisco, CA, USA, p. 596-599

  • S. Lee*, R. Iida, S. H. Kim, M. Yokoyama, N. Taoka, Y. Urabe, T. Yasuda, H. Takagi, H. Ishii, N. Miyata, H. Yamada, N. Fukuhara, M. Hata, M. Takenaka and S. Takagi : “InGaAs and InGaAs-On-Insulator n-Channel MOSFETs Fabricated by Self-Align Gate First Process with Ni/Al2O3 gate stacks”, 2010 International conference on Solid State Devices and Materials (SSDM), 2010/9, The University of Tokyo, Japan, p. 267-268

  • M. Yokoyama*, R. Iida, S. H. Kim, N. Taoka, Y. Urabe, T. Yasuda, H. Takagi, H. Yamada, N. Fukuhara, M. Hata, M. Sugiyama, Y. Nakano, M. Takenaka, and S. Takagi : “Extremely-thin-body InGaAs-On-Insulator MOSFETs on Si fabricated by direct wafer bonding”, 2010 International Electron Devices Meeting (IEDM), 2010/12, San Francisco, CA, USA, p. 46-49

  • N. Taoka*, M. Yokoyama, S. H. Kim, T. Hoshii, R. Iida, S. Lee, R. Suzuki, Y. Urabe, N. Miyata, T. Yasuda, H. Yamada, N. Fukuhara, M. Hata, M. Takenaka, and S. Takagi : “ALD Temperature Dependence of Slow Trap Properties at ALD-Al2O3/InP Interfaces”, 2010 Semiconductor Interface Specialists Conference, 2010/12, San Diego, CA, USA, p. 16

<2009>

  • S. H. Kim*, S. Nakagawa, T. Haimoto, R. Nakane, M. Takenaka and S. Takagi : “Metal Source/Drain Inversion-mode InP MOSFETs”, The 67th Device Research Conference (DRC), 2009/6, The Pennsylvania State University, University Park, PA, USA, p. 115

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