*Corresponding authorship

<2024>

• S. -K. Kim, H. -R. Lim, J. Jeong, Y. Park, J. Park, S. Park, J. Park, D. Ha, B. -J. Cho, S. -H. Kim*, "First Demonstration and Record-high Hole Mobility of Ge (110) GAA Nanosheet p-FETs for Heterogeneous 3D Monolithic CFETs", Symposium on VLSI Technology and Circuits, 2024/6, Hawai, US, to be presented

• N. Rheem+, J. Jeong+, Y. -J. Suh, C. -J. Lee, B. -H. Kim, J. -P. Kim, S. -K. Kim, H. -R. Lim, J. Kim, D. -W.Ahn, J. -H. Han, J. Lee, S. -H. Kim*, "First Heterogeneous and Monolithic 3D (HM3D) Integration of InGaAs HEMTs and InP/InGaAs DHBTs on Si CMOS for Next-Generation Wireless Communication", Symposium on VLSI Technology and Circuits, 2024/6, Hawai, US, to be presented

• Y. Shin, J. Lim, S. -H. Kim, S. Kim*, "Crosstalk suppression in germanium-on-insulator platform using subwavelength gratings for mid-infrared photonics", SPIE, 2024/1, San Francisco, US

• W. -J. Baek, J. Park, H. -S. Kim, D. -M. Geum, S. -H. Kim*, "Carrier localization induced size-immunity behavior of green InGaN/GaN micro-light-emitting diodes", SPIE, 2024/1, San Francisco, US

<2023>

• J. Jang, I. -S. Kang, S. Jung, H. Cho, S. -H. Kim*, "Wavelength – Tunable Grating – Resonance InGaAs Narrowband Photodetector with Infrared Optical PCM, Antimony Triselenide (Sb2Se3)", 2023 International Electron Devices Meeting (IEDM), 2023/12, San Francisco, CA, USA

• J. -P. Kim†, H. -W. Kim†, J. Jeong, J. Park, S. -K. Kim, J. Kim, J. Woo*, S. -H. Kim*, "BEOL-compatible 4F2 Single Crystalline Semiconductor Oscillator for Low-power and Large-scale Oscillatory Neural Network Hardware", 2023 International Electron Devices Meeting (IEDM), 2023/12, San Francisco, CA, USA

• J. Shim, J. Lim, I. Kim, S. -K. Kim, S. -Y. Ahn, J. Park, J. Jeong, B. -H. Kim, S. Lee, J. An, D. -M. Geum, S. -H. Kim*, "Fully CMOS-Compatible Room-Temperature Waveguide-Integrated Bolometer Based on Germanium-on-Insulator Platform at Mid-Infrared Operating Beyond 4 μm", 2023 International Electron Devices Meeting (IEDM), 2023/12, San Francisco, CA, USA

• J. Jeong, S. -J. Choi, J. Shim, E. Kim, S. -K. Kim, B. -H. Kim, J. -P. Kim, Y. -J. Suh, W. -J. Beak, D. -M. Geum, Y. Koh, D. Kim, S. -H. Kim*, "Thermal Management in Multi-Finger GaN-on-Si HEMTs: Understanding and Mitigating Self-Heating and Thermal Crosstalk for Enhanced Device Reliability", 2023 International Electron Devices Meeting (IEDM), 2023/12, San Francisco, CA, USA

• J. Jeong, J. Kim, J. -S. Lee, , Y. -J. Suh, N. Rheem, S. -K. Kim, J. Park, B. -H. Kim, J. -P. Kim, S. -Y. Park, S. -H. Kim*, "Impact of the channel thickness fluctuation on the subthreshold swing of InGaAs HEMTs at cryogenic temperature down to 4 K for ultra-low power LNAs", 2023 International Electron Devices Meeting (IEDM), 2023/12, San Francisco, CA, USA (recognized as the top-ranked student papers in IEDM 2023)

• S. -K. Kim, H. -R. Lim, J. Shim, W. Baek, S. Kim, Y. Park, J. Jeong, J. Lim, J. -P. Kim, J. Jeong, B. -H. Kim, D. -M. Geum, B. -J. Cho, S. -H. Kim*, "Role of Inter-Layer Dielectric on the Electrical and Heat Dissipation Characteristics in the Heterogeneous 3D Sequential CFETs with Ge pFETs on Si nFETs", 2023 International Electron Devices Meeting (IEDM), 2023/12, San Francisco, CA, USA

• B. -H. Kim, S. -K. Kim, S. -H. Kuk, Y. J. Seo, J. Jeong, J. -P. Kim, S. -H. Kim*, "IL Scavenging and Recovery Strategies to Improve the Performance and Reliability of HZO-Based FeFETs", 2023 International Electron Devices Meeting (IEDM), 2023/12, San Francisco, CA, USA

• [Invited paper] S. -H. Kim*, "Cryogenic InGaAs HEMTs for LNA and routing circuits in Quantum Computing" International Conference on IC Design and Technology (ICICDT), 2023/9, Tokyo, Japan

• [Invited paper] S. -H. Kim*, J. Jeong, S. -K. Kim, Y. -J. Suh, J. Lee, J. Choi, J. Park, J. -P. Kim, B. -H. Kim, Y. Jo, S. -Y. Park, J. Kim, "Cryogenic InGaAs HEMTs for LNA and routing circuits in Quantum Computing", 2023 International conference on Solid State Devices and Materials (SSDM), 2023/9, Nagoya, Japan

• [Invited paper] S. -H. Kim*, J. Park, W. Baek, D. -M. Geum "Monolithic 3D integration of high-resolution MicroLED pixels on CMOS backplane and Re-consideration of the epitaxial structure of LEDs", International Meeting on Information Display (IMID), 2023/8, Bexco, Korea

• W. Baek, J. Park, H. -S. Kim, D. -M. Geum, S. -H. Kim*, "Surface Current Analysis on Lateral Diffusions of Carriers in Micro-light-emitting Diodes", International Meeting on Information Display (IMID), 2023/8, Bexco, Korea

• J. Jeong, S. -K. Kim, Y. -J. Suh, J. Lee, J. Choi, J. Park, J. -P. Kim, B. -H. Kim, Y. Jo, S. -Y. Park, J. Kim, S. -H. Kim*, "Cryogenic RF Transistors and Routing Circuits Based on 3D Stackable InGaAs HEMTs with Nb Superconductors for Large-Scale Quantum Signal Processing", Symposium on VLSI Technology and Circuits, 2023/6, Kyoto, Japan (Highlight paper in VLSI 2023, 11 out of 89 presented papers, featured in research highlight in Nature Electronics)

• S.- H. Kuk, J. -H. Han*, B. -H. Kim, J. -P. Kim, S. -H. Kim*, "Strategy for 3D Ferroelectric Transistor: Critical Surface Orientation Dependence of HfZrOx on Si", Symposium on VLSI Technology and Circuits, 2023/6, Kyoto, Japan

• S.- H. Kuk, J. -H. Han, B. -H. Kim, J. -P. Kim, S. -H. Kim*, "Proposal of P-Channel FE NAND with High Drain Current and Feasible Disturbance for Next Generation 3D NAND", International Memory Workshop, 2023/5, Monterey, US (Best Student Paper Award)

• S. -Y. Ahn, J. Lim, J. H. Eom, S. -M. Ryu, H. -J. Lee, Y. -H. Kim, S. -H. Kim*, "Broadband and high-quantum-efficiency LWIR T2SL nBn detector with guided-mode-resonance structure", SPIE DCS, 2023/4, Orlando, US

<2022>

• J. Jang, J. Shim, J. Lim, G. -C. Park, J. Kim, D. -M. Geum, S. -H. Kim*, "Grating-resonance InGaAs narrowband photodetector for multispectral detection in NIR-SWIR region", 2022 International Electron Devices Meeting (IEDM), 2022/12, San Francisco, CA, USA

• S. -K. Kim, H. -R. Lim, J. -J. Jeong, S. -W. Lee, J. -P. Kim, J. -Y. Jeong, B. -H. Kim, S. -Y. Ahn, Y. -K. Park, D. -M. Geum, Y. Kim, Y. -K. Baek, B. -J. Cho, S. -H. Kim*, "Heterogeneous 3D Sequential CFET with Ge (110) Nanosheet p-FET on Si (100) bulk n-FET by Direct Wafer Bonding", 2022 International Electron Devices Meeting (IEDM), 2022/12, San Francisco, CA, USA

• J. Lim, J. Shim, I. Kim, S. -K. Kim, H. -R. Lim, S. -Y. Ahn, J. Park, D. -M. Geum, S. -H. Kim*, "Biochemical spectroscopy based on germanium-on-insulator platform for mid-infrared optical sensor", 2022 International Electron Devices Meeting (IEDM), 2022/12, San Francisco, CA, USA (Highlight paper in IEDM 2022)

• J. Jeong, S. -K. Kim, J. Kim, J. -S. Lee, J. -P. Kim, B. -H. Kim, Y. -J. Suh, D. -M. Geum, S. -Y. Park, S. -H. Kim*, "3D Stackable Cryogenic InGaAs HEMT-Based DC and RF Multiplexer/Demultiplexer for Large-Scale Quantum Computing", 2022 International Electron Devices Meeting (IEDM), 2022/12, San Francisco, CA, USA

• [Invited paper] S. -H. Kim*, "Monolithic 3D III-V HEMT for future communication and quantum computing" International Conference on Electronic Materials and Nanotechnology for Green Environment (ENGE), 2022/11, Jeju, Korea

• [Invited paper] S. -H. Kim*, "Monolithic 3D III-V HEMT for future communication and quantum computing" International Conference on IC Design and Technology (ICICDT), 2022/9, Hanoi, Vietnam

• J. Shim, J. Lim, D. -M. Geum, J. -B. You, H. Yoon, J. -P. Kim, W. -J. Baek, J. -H. Han, and S. -H. Kim*, "Free carrier absorption-assisted photodetection using a waveguide-integrated bolometer with flat spectral response for integrated optical sensors", SPIE Optical Engineering + Applications, 2022/8, San Diego, USA

• T. Jin, C. -J. Kim, T. -H. Noh, S. Xinkai, J. -H. Han, S. -H. Kim, Y. Kim*, "A New Approach to Compensate Threshold Voltage Variation in the Current-driving Display Using a Ferroelectric TFT", International Meeting on Information Display (IMID), 2022/8, Coex, Korea

• J. -H. Lim, J. Shim, S. -K. Kim, H. Lim, S.- W. Lee, D. -M. Geum, S. -H. Kim*, "Low-loss Germanium-on-insulator passive waveguides for mid-infrared photonics platform", Optical Sensors and Sensing Congress, 2022/7, Vancouver British Columbia, Canada

• [Invited paper] S. -H. Kim*, J. Lim, J. -S. Shim, D. -M. Geum, "Ge-based Mid-infrared integrated photonics platform for Sensing", Device Research Conference (DRC), 2022/6, Ohio, US

• J. Park+, D. -M. Geum+, W. Baek, J. Shieh, S. -H. Kim*, "Monolithic 3D sequential integration realizing 1600-PPI red micro-LED display on Si CMOS driver IC", Symposium on VLSI Technology and Circuits, 2022/6, Hawai, US

• J. Jeong, S. -K. Kim, J. Kim, D. -M. Geum, J. Lee, S. -Y. Park, S. -H. Kim*, "3D Stackable cryogenic InGaAs HEMTs for heterogeneous and monolithic 3D integrated highly scalable quantum computing systems", Symposium on VLSI Technology and Circuits, 2022/6, Hawai, US

• D. -M. Geum+, J. Lim+, J. Jang, S. Ahn, S. -K. Kim, J. Shim, B. -H. Kim, J. Park, W. -J. Baek, J. Jeong, S. -H. Kim*, "A sub-micron-thick InGaAs broadband (400-1700 nm) photodetectors with a high external quantum efficiency (>70%)", Symposium on VLSI Technology and Circuits, 2022/6, Hawai, US

• W. -J. Baek, D. -M. Geum, J. Park, S. -H. Kim*, “Enhanced External Quantum Efficiency in the Low-Current Region Using Three Terminal GaN-based Blue Micro-Light-Emitting Diodes”, SID Display Week, 2022/5, San Jose, CA, USA

• J. Jeong, S. -K. Kim, J. Kim, D. -M. Geum, S. -H. Kim*, "Heat management in monolithic 3D RF platform", IEEE Electron Devices Technology and Manufacturing Conference (EDTM), 2022/3, Virtual

• S. -Y. Ko, B. -W. Lee, H. -J. Kim, S. -I. Na, J. -B. Kim, P. Bidenko, S. -H. Kim, Y. -H. Kim, "Comparison of InGaAs and type-II superlattice based extended SWIR detectors", SPIE DCS, Orlando, Florida, USA

<2021>

• S. –H. Kuk, S. -M. Han, B. -H. Kim, S. -H. Baek, J. -H. Han, S. -H. Kim*, “Comprehensive Understanding of the HZO-based n/pFeFET Operation and Device Performance Enhancement Strategy”, 2021 International Electron Devices Meeting (IEDM), 2021/12, San Francisco, CA, USA

• J. –Y. Jeong, S. -K. Kim, J. Kim, D. -M. Geum,  S. -H. Kim, “Monolithic 3D Integrated InGaAs HEMTs on Si for Next-Generation Communication: Record fMAX and Relaxed Self-Heating of Top Devices by a Novel M3D Structure”, 2021 International Electron Devices Meeting (IEDM), 2021/12, San Francisco, CA, USA

• J. –S. Shim, J. -H. Lim, D. -M. Geum, J. -B. You, H. Yoon, J. Kim, W. -J. Baek, J. -H. Han, S. -H. Kim*, “TiOx/Ti/TiOx Tri-layer Film-based Waveguide Bolometric Detector for On-Chip Si Photonic Sensors”, 2021 International Electron Devices Meeting (IEDM), 2021/12, San Francisco, CA, USA (recognized as the top-ranked student papers in IEDM 2021)

• J. –K. Han+, J. Sim+, D. -M. Geum, S. -K. Kim, J. -M. Yu, J. Kim, S. -H. Kim*, Y. -K. Choi*, “3D Stackable Broadband Photoresponsive InGaAs Biristor Neuron for a Neuromorphic Visual System with Near 1 V Operation”, 2021 International Electron Devices Meeting (IEDM), 2021/12, San Francisco, CA, USA

• J. –S. Shim, J. -H. Lim, D. -M. Geum, J. -B. You, H. Yoon, J. Kim, W. -J. Baek, J. -H. Han, S. -H. Kim*, “Bolometric photodetection with a TiOx/Ti/TiOx tri-layer film-based waveguide for on-chip silicon photonic sensors”, International Conference on Advanced Materials and Devices, 2021/12, Jeju, Korea

• [Invited paper] S. -H. Kim*, "Monolithic 3D with III-V compound for Mixed-signal IC", International Union of Materials Research Societies - International Conference in Asia (IUMRS-ICA), 2021/10, Jeju, Korea

• [Invited paper] S. -H. Kim*, "Monolithic 3D integration of III-V and group IV materials", European Materials Research Society (E-MRS) Fall Meeting, 2021/9, virtual

• [Invited paper] S. -H. Kim*, "Monolithic 3D for high-frequency mixed-signal IC", Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD), 2021/8, virtual

• J. Park, D. -M. Geum, W. -J. Baek, S. -H. Kim*, "Surface Passivation of AlGaInP/GaInP Red Micro-LED", The 21st International Meeting on Information Display (IMID), 2021/8, Coex, Korea

• [Invited paper] S. -H. Kim*, "Monolithic 3D integration for high-frequency applications", Nano Korea, 2021/7, Kintex, Korea

• D. -M. Geum, S. -K. Kim, H. -R. Lim, J. Park, J. Jeong, J. H. Han, W. J. Choi, H. -J. Kim, S. -H. Kim*, "Electrical characterization of wafer-bonded interfaces of p+InGaAs/n+InGaAs and p+GaAs/n+InGaAs", Global Photovoltaic Conference (GPVC) 2021, 2021/7, Gwangju, Korea

• J. -H. Lim, J. Shim, S. -H. Kim*, "Design and fabrication of Ge-on-Si slot waveguide for mid-infrared optical gas sensor", OSA Optical Sensors and Sensing Congress, 2021/7, virtual

• J. Shim, J. -H. Lim, S. -H. Kim*, "Investigation on TiOx/Ti/TiOx tri-layer film for integrated optical gas sensing applications",  OSA Optical Sensors and Sensing Congress, 2021/7, virtual

• J. Jeong, S. -K. Kim, J. Kim, D. -M. Geum, J. Park, J. -H. Jang, S. -H. Kim*, "High-performance InGaAs-On-Insulator HEMTs on Si CMOS for Substrate Coupling Noise-free Monolithic 3D Mixed-Signal IC", Symposium on VLSI Technology, 2021/6, virtual 

• A. Jang*, Y. -H. Kim, J. Han, P. Bidenko, S. -H. Kim*, "Effect of Barrier Layer on InAs/GaSb Type-II Superlattice nBn Detector", The 20th International Conference on Electronics, Information, and Communication (ICEIC 2021), 2021/1,Jeju Korea

<2020>

• [Invited paper] S. -H. Kim*, "Monolithic 3D technology for optoelectronic applications", The 6th International Conference on Electronic Materials and Nanotechnology for Green Environment (ENGE), 2020/11, Jeju, Korea

• [Invited paper] S. -H. Kim*, D, -M. Geum, "Toward ultra-high-resolution Micro/Nano-LED display", The 20th International Meeting on Information Display (IMID), 2020/8, Korea

<2019>

• Y. Kim, S. -H. Kim, Y. Ban, D. Yudistira, M. Pantouvaki, Joris V. Campenhout, "Proposal and simulation of a low loss, highly efficient monolithic III-V/Si optical phase shifter", Group Four Photonics (GFP), 2019/8, Singapore

• D. -M. Geum, S. -H. Kim (co-first), S. -K. Kim, S. -S. Kang, J. -H. Kyhm, J. -D. Song, W. J. Choi*, and E. Yoon*, "Monolithic integration of GaAs//InGaAs photodetectors for multicolor detection", Symposium on VLSI Technology (2019), 2019/6, Kyoto, Japan

<2018>

• J. -H. Han (co-first)*, P. Bidenko (co-first), J. D. Song, and S.- H. Kim*, "Numerical Study on Modulation Efficiency Enhancement of SIS Optical Phase Shifter Using Negative Capacitance Effect", The 8th International Symposium on Photonics and Electronics Convergence (ISPEC), 2018/12, Tokyo, Japan

• S.- H. Kim*, S. –K. Kim, S. –H. Shin, J. –H. Han, D. –M. Geum, J. –P. Shim, S. Lee, H. –S. Kim, G. Ju, J. –D. Song, M. A. Alam, H. –J. Kim, “Heat Shunting by Innovative Source/Drain Contact to Enable Monolithic 3D Integration of InGaAs MOSFETs”, IEEE S3S conference, 2018/10, San Francisco, USA

• I. Roh, S. –H. Kim*, J. Han, D. –M. Geum, S. –K. Kim, S. Kang, H. –K. Kang, W. Lee, S. K. Kim, D. Hwang, Y. Song, J. –D. Song, “Low leakage current and High mobility Ultra-thin-body InGaSb p-FETs”, 2018 International conference on Solid State Devices and Materials (SSDM), 2018/9, The University of Tokyo, Japan

• J. -H. Han (co-first)*, P. Bidenko (co-first), J. D. Song, and S. -H. Kim* : "Feasibility study on negative capacitance SIS phase shifter for low-power optical phase modulation", Group Four Photonics (GFP), 2018/8, Cancun, Maxico

• J. -H. Han*, H- J. Kim, W. J. Choi, J. D. Song, and S. -H. Kim* : "Design of efficient phase shifter using InGaAs-InAs/Ge SIS capacitor for mid-IR photonics application", Group Four Photonics (GFP), 2018/8, Cancun, Maxico

• [Invited paper] S. -H. Kim* : "Heterogeneous integration technology for 3D opto-electronic integrated circuits", 40th Progress In Electromagnetics Research Symposium (PIERS), 2018/7, Toyama, Japan

• B. Kunert*, M. Baryshnikova, Y. Mols, Y. Shi, D. V. Thourhout, N. Kuznetsova, S. –H. Kim, Cenk I. Ozdemir, M. Pantouvaki, J. V. Campenhout, R. Langer : “III-V photonic devices on Si”, 9th International SiGe Technology and Device Meeting (ISTDM) / 11th International Conference on Silicon Epitaxy and Heterostructures (ICSI), 2018/5, Potsdam, Germany

<2017>

• S. -H. Kim*, D. -M. Geum, M. -S. Park, C. Z. Kim, and W. J. Choi : “GaAs solar cell on Si substrate Realized by wafer bonding”, Global PhotoVoltaic Coference (GPVC), 2017/3, GwangJu, Korea

• [Invited paper] S. -H. Kim*, S. -K. Kim, J. -P. Shim, D. -M. Geum, G. Ju, H. -S. Kim, H. -J. Lim, H. -R. Lim, J. -H. Han, C. -M. Kang, D. -S. Lee, J. -D. Song, W. J. Choi, H. -J. Kim, “Heterogeneous Integration toward Monolithic 3D Chip”, IEEE S3S conference, 2017/10, San Francisco, USA

• [Invited paper] S Takagi*, DH Ahn, T Gotow, M Noguchi, K Nishi, S -H. Kim, M Yokoyama, C-Y Chang, S-H Yoon, C Yokoyama, M Takenaka : “III–V-based low power CMOS devices on Si platform”, 2017 IEEE International Conference on IC Design and Technology (ICICDT), 2017/5, Texas, USA

• W. Lu*, I. P. Roh, D. –M. Geum, S. –H. Kim, J. D. Song, L. Kong, and J. A. del Alamo : “10-nm Fin-Width InGaSb p-Channel Self-Aligned FinFETs Using Antimonide-Compatible Digital Etch”, 2017 International Electron Devices Meeting (IEDM), 2017/12, San Francisco, CA, USA, p. 433

<2016>

• [Best Paper Award] S. -H. Kim*, D. -M. Geum, S. -K. Kim, H. -J. Kim, J. -D. Song, and W. J. Choi : “High-speed epitaxial lift-off for III-V-on-insulator transistors on Si substrates”, IEEE S3S conference, 2016/10, San Francisco, USA

• S. -H. Kim*, D. -M. Geum, M. -S. Park, H. -S. Kim, J. -D. Song, and W. J. Choi : “Fabrication and characterization of GaAs pin photodetector array on Si”, International Symposium on Photonics and Electronics Convergence (ISPEC), 2016/11, Tokyo, Japan

• S. H. Shin* (co-first), S. –H. Kim (co-first), S. Kim, H. Wu, P. D. Ye, and M. A. Alam* : “Substrate and Layout Engineering to Suppress Self-heating in Floating Body Transistors”, 2016 International Electron Devices Meeting (IEDM), 2016/12, San Francisco, CA, USA, p. 404

• D. -M. Geum, M.-S. Park, C. –Z. Kim, S. –H. Kim*, W. J. Choi*, and E. Yoon : “Influence of Light Concentration on GaAs Solar Cell on Cu Substrate”, The 18th International Symposium on the Physics of Semiconductors and Applications (ISPSA), 2016/7, Jeju, Korea, M-P-011

• H. –S. Kim, M. –H. Park, M. –S. Park, S. –H. Kim, J. –H. Kyhm, J. –D. Song, S. –H. Kim, W. J. Choi*, and J. –H. Park* : “Effects of hydrogen plasma treatment on the various structure of the InAs/GaAs quantum dot solar cells”, The 18th International Symposium on the Physics of Semiconductors and Applications (ISPSA), 2016/7, Jeju, Korea, M-P-018

• S. -K. Kim, J. -P. Shim, D. -M. Geum, C. Z. Kim, H. -S. Kim, Y. -S. Kim, H. -K. Kang, J. D. Song, S. -J. Choi, D. H. Kim, W. J. Choi, H. -J. Kim, D. M. Kim*, and S. -H. Kim* : “Cost-effective Fabrication of In0.53Ga0.47As-on-Insulator on Si for Monolithic 3D via Novel Epitaxial Lift-Off (ELO) and Donor Wafer Re-use”, 2016 International Electron Devices Meeting (IEDM), 2016/12, San Francisco, CA, USA, p. 616

<2015>

• [Invited paper] S. Takagi*, S. -H. Kim, Y. Ikku, M. Yokoyama, R. Nakane, J. Li, Y. -C. Kao, M. Takenaka : “High Performance III-V-on-Insulator MOSFETs on Si Realized by Direct Wafer Bonding Applicable to Large Wafer Size” 227th ECS Meeting, 2015/10

• [Invited paper] M. Takenaka*, Y. Kim, J. Han, J. Kang, Y. Ikku, Y. Cheng, J.-K. Park, S. -H Kim, and S. Takagi : “CMOS photonics technologies based on heterogeneous integration of SiGe/Ge and III-V”, 2015 International Electron Devices Meeting (IEDM), 2015/12, Washington, DC, USA

<2014>

• S. H. Kim*, Y. Ikku, M. Yokoyama, R. Nakane, J. Li, Y. C. Kao, M. Takenaka, and S. Takagi, “High Performance InGaAs-On-Insulator MOSFETs on Si by Novel Direct Wafer Bonding Technology applicable to Large Wafer Size Si”, Symposium on VLSI Technology (2014), 2014/6, Hawai, USA, p. 32

• S. -H. Kim*, M. -S. Park, D. -M. Geum, H. D. Yang, H. S. Kim, G. H. Ryu, J. D. Song, C. Z. Kim, and W. J. Choi : “Fabrication and characterization of GaAs solar cell on Si substrate”, The 17th International Symposium on the Physics of Semiconductors and Applications (ISPSA), 2014/12, Jeju, Korea, M-P-025

• [Invited paper] S. Takagi*, S.-H. Kim, M. Yokoyama, K. Nishi, R. Zhang, and M. Takenaka : “Material Challenges and Opportunities in Ge/III-V channel MOSFETs”, 226th ECS Meeting, 2014/10, Cancun, Maxico

• M. -S. Park, H. D. Yang, D. M. Geum, J. D. Song, S. H. Kim, S. -H. Kim, and W. J. Choi* : “Photovoltaic InAs/GaAs p-i-n Quantum Dot Infrared Photodetectors Operating at High-temperature”, The 17th International Symposium on the Physics of Semiconductors and Applications (ISPSA), 2014/12, Jeju, Korea, T-P-065

<2013>

• S. H. Kim*, M. Yokoyama, R. Nakane, O. Ichikawa, T. Osada, M. Hata, M. Takenaka and S. Takagi, “Analysis on channel thickness fluctuation scattering in InGaAs-OI MOSFETs”, IPRM (2013), 2013/5, Kobe, Japan, WeD1-3

• S. H. Kim*, M. Yokoyama, R. Nakane, O. Ichikawa, T. Osada, M. Hata, M. Takenaka and S. Takagi, “Strained Extremely-thin Body In0.53Ga0.47As-On-Insulator MOSFETs on Si substrates”, Symposium on VLSI Technology (2013), 2013/6, Kyoto, Japan, p. T50

• S. H. Kim*, M. Yokoyama, R. Nakane, O. Ichikawa, T. Osada, M. Hata, M. Takenaka and S. Takagi, “High Performance Extremely-thin Body InAs-On-Insulator MOSFETs on Si with Ni-InGaAs Metal S/D by Contact Resistance Reduction Technology”, Symposium on VLSI Technology (2013), 2013/6, Kyoto, Japan, p. T52

• S. -H. Kim*, M. Yokoyama, Y. Ikku, R. Nakane, O. Ichikawa, T. Osada, M. Hata, M. Takenaka, and S. Takagi, “Physical understanding of electron mobility in uniaxially strained InGaAs-OI MOSFETs”, 43rd European Solid-State Device Research Conference (ESSDERC), 2013/9, Bucharest, Romania, B4L-A1

• S. H. Kim*, M. Yokoyama, R. Nakane, O. Ichikawa, T. Osada, M. Hata, M. Takenaka and S. Takagi : “High performance sub-20-nm-channel-length extremely-thin body InAs-on-insulator Tri-gate MOSFETs with high short channel effect immunity and Vth tunability”, 2013 International Electron Devices Meeting (IEDM), 2013/12, Washington, DC, USA, p. 429

• [Invited paper] S. Takagi*, R. Zhang, N. Taoka, R. Suzuki, S.-H. Kim, M. Yokoyama, and M. Takenaka, “MOS interface control in III-V/Ge gate stacks and the impact on MOSFET performance”, The spring MRS symposium S13, 2013/4, San Francisco, California, USA, CC1.04

• [Invited paper] S. Takagi*, M. Yokoyama, S.-H. Kim, R. Zhang, R. Suzuki, N. Taoka, and M. Takenaka, “III-V/Ge CMOS device technologies for high performance logic applications”, 223rd ECS Meeting 53, p. 85 2013/5, Toronto, Canada

• [Invited paper] S. Takagi*, S.-H. Kim, R. Zhang, N. Taoka, M. Yokoyama, and M. Takenaka, “Limiting factors of channel mobility in III-V/Ge MOSFETs”, 223rd ECS Meeting 53, p. 97, 2013/5, Toronto, Canada

• C.-Y. Chang*, M. Yokoyama, S.-H. Kim, O. Ichikawa, T. Osada, M. Hata, M. Takenaka, and S. Takagi, “Impact of metal gate electrodes on electrical properties of InGaAs MOS gate stacks”, 18th Conference on "Insulating Films on Semiconductors", 2013/6, Cracow, Poland

• Minsoo Kim*, Younghyun Kim, Masafumi Yokoyama, Ryosho Nakane, SangHyeon Kim, Mitsuru Takenaka and Shinichi Takagi, “Tunnel Field-Effect Transistors with Germanium/Strained-Silicon Hetero-junctions for Low Power Applications”, 8th International Conference on Silicon Epitaxy and Heterostructures (ICSI), 2013/6, Fukuhoka, Japan, P1-26

• [Invited paper] S. Takagi*, R. Zhang, R. Suzuki, C.-Y. Chang, N. Taoka, S.-H. Kim, M. Yokoyama and M. Takenaka, “III-V/Ge MOS Interface Control Using and High k Films”, 15th Asian Chemical Congress (15ACC), Resorts World Sentosa, Singapore, Aug 19-23, 2013

• W. Kim*, Y. Kin, Y. Kim, S. -H. Kim, T. Osada, M. Hata, M. Takenka, and S. Takagi : “Ultra-thin body Ge-on insulator nMOSFETs fabricated by Ge condensation with S/D region formed with Sb diffusion”, Int. Conf. on Solid State Devices and Materials (2013), 2013/9, Fukuoka, Japan, p. 744

• [Invited paper] S. Takagi*, S.-H. Kim, M. Yokoyama, W.-K. Kim, R. Zhang and M. Takenaka, “Ultra-thin body MOS device technologies using high mobility channel materials”, IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, Hyatt Regency Monterey Hotel and Spa, Monterey, California, October 7-10, 2013

• [Invited paper] S. Takagi*, R. Zhang, S.-H. Kim, M. Yokoyama and M. Takenaka : “Performance Enhancement Technologies in III-V/Ge MOSFETs”, 224th Electrochemical Society Meeting, 2013/10, San Francisco, CA, USA, p. 137-148

• K. Nishi*, M. Yokoyama, S. H. Kim, H. Yokoyama, M. Takenaka, and S. Takagi, “Electrical Properties of metal/GaSb junctions using metal-GaSb alloys”, 2013 Semiconductor Interface Specialists Conference (SISC), 2013/12, Arlington, Virginia, USA, 9.4

• M. Noguchi*, S. H. Kim, M. Yokoyama, O. Ichikawa, T. Osada, M. Hata, M. Takenaka, and S. Takagi : “High Ion/Ioff and low subthreshold slope planar-type InGaAs Tunnel FETs with Zn-diffused source junctions”, 2013 International Electron Devices Meeting (IEDM), 2013/12, Washington, DC, USA, p. 683

<2012>

• S. H. Kim*, M. Yokoyama, N. Taoka, R. Nakane, T. Yasuda, O. Ichikawa, N. Fukuhara, M. Hata, M. Takenaka and S. Takagi, “Sub-60 nm Deeply-Scaled Channel Length Extremely-thin Body InxGa1-xAs-On-Insulator MOSFETs on Si with Ni-InGaAs Metal S/D and MOS Interface Buffer Engineering”, Symposium on VLSI Technology (2012), 2012/6, Hawai, USA, p. 177

• C. B. Zota*, S. H. Kim, Y. Asakura, M. Takenaka and S. Takagi : “Self-aligned metal S/D GaSb p-MOSFETs using Ni-GaSb alloys”, 70th Device Research Conference (DRC), June 18-20, Pennsylvenia State University, University Park, PA, USA, P. 71-72 (2012)

• [Invited paper] S. Takagi*, S. –H. Kim, R. Zhang, M. Yokoyama, N.Taoka, and M. Takenaka : “III-V/Ge CMOS Device Technologies for High Performance and Low Power Logic Applications”, Int. Conf. on Solid State Devices and Materials (2012), Kyoto, Japan, p. 793

• [Invited paper] S. Takagi*, R. Zhang, S. –H. Kim, N. Taoka, M. Yokoyama, J.-K. Suh, R. Suzuki, Y. Asakura, C. Zota and M. Takenaka : “MOS interface and channel engineering for high-mobility Ge/III-V CMOS”, 2012 International Electron Devices Meeting (IEDM), 2012/12, San Francisco, CA, USA, p. 505

<2011>

• S. H. Kim*, M.Yokoyama, N.Taoka, R. Iida, S. Lee, R.Nakane, Y. Urabe, N. Miyata, T. Yasuda, H. Yamada, N. Fukuhara, M. Hata, M.Takenaka and S.Takagi, “Self-aligned metal S/D InP MOSFETs using metallic Ni-InP alloy”, IPRM (2011), 2011/5, Berlin, Germany, Tu-5.1.3.

• [highlight paper] S. H. Kim*, M. Yokoyama, N. Taoka, R. Iida, S. Lee, R. Nakane, Y. Urabe, N. Miyata, T. Yasuda, H. Yamada, N. Fukuhara, M. Hata, M. Takenaka and S. Takagi, “High performance Extremely-thin Body III-V-On-Insulator MOSFETs on a Si substrate with Ni-InGaAs metal S/D and MOS Interface Buffer Engineering”, Symposium on VLSI Technology (2011), 2011/6, Kyoto, Japan, p. 58

• S. H. Kim*, M. Yokoyama, N. Taoka, R. Nakane, T. Yasuda, H. Yamada, N. Fukuhara, M. Hata, M. Takenaka and S. Takagi : “Enhancement Technologies and Physical Understanding of Electron Mobility in III-V n-MOSFETs with Strain and MOS Interface Buffer Engineering”, 2011 International Electron Devices Meeting (IEDM), 2011/12, Washington, DC, USA, p. 311-314

• N. Taoka*, M. Yokoyama, S. H. Kim, R. Suzuki, T. Hoshii, R. Iida, S. Lee, Y. Urabe, N. Miyata, T. Yasuda, H. Yamada, N. Fukuhara, M. Hata, M. Takenaka, and S. Takagi : “Impacts of (NH4)2S treatment and ALD temperature on ALD-Al2O3/InP Interface Properties”, 2011 International Workshop on Dielectric Thin Films for future electron devices, 2011/1, Tokyo Institute of Technology, Japan, p. 149-150

• N. Taoka*, M. Yokoyama, S. H. Kim, R. Suzuki, T. Hoshii, R. Iida, S. Lee, Y. Urabe, N. Miyata, T. Yasuda, H. Yamada, N. Fukuhara, M. Hata, M. Takenaka, and S. Takagi, “Quantitative Analysis of Conductance Curves in Al2O3/InP Interfaces”, 17th Conference on "Insulating Films on Semiconductors", 2011/6, Grenoble, France

• M. Yokoyama*, S. H. Kim, R. Zhang, N. Taoka, Y. Urabe, T. Maeda, H. Takagi, T. Yasuda, H. Yamada, O. Ichikawa, N. Fukuhara, M. Hata, M. Sugiyama, Y. Nakano, M. Takenaka and S. Takagi, “CMOS integration of InGaAs nMOSFETs and Ge pMOSFETs with self-align Ni-based metal S/D using direct wafer bonding”, Symposium on VLSI Technology (2011), T4A-3

• [Invited paper] S. Takagi*, M. Yokoyama, S.-H. Kim and M. Takenaka, “Device and integration technologies of III-V/Ge channel CMOS”, Symposium on ULSI Process Integration 7, Symposium E4 of the 220th Electrochemical Society (ECS) Meeting, Boston, Massachusetts, on October 10-14, 2011

• R. Suzuki*, S. Lee, S. H. Kim, T. Hoshii, M. Yokoyama, N. Taoka, T. Yasuda, W. Jevasuwan, T. Maeda, O. Ichikawa, N. Fukuhara, M. Hata, M. Takenaka, and S. Takagi : “Effect of sulfur treatment on HfO2/InGaAs MOS interfaces properties”, Int. Conf. on Solid State Devices and Materials (2011), Nagoya, Japan, p. 941.

• R. Iida*, S. H. Kim, M. Yokoyama, N. Taoka, S. H. Lee, M. Takenaka and S. Takagi : “Device characteristics of planar-type In0.53Ga0.47As channel band-to-band tunneling MOSFETs”, Int. Conf. on Solid State Devices and Materials (2011), Nagoya, Japan, p. 843-844

• [Invited paper] S. Takagi*, M. Yokoyama, S.-H. Kim and M. Takenaka : “Device and integration technologies of III-V/Ge channel CMOS”, Symposium on ULSI Process Integration 7, Symposium E4 of the 220th Electrochemical Society (ECS) Meeting, Boston, Massachusetts, on October 10-14, 2011, ECS Trans. 41(7) (2011) pp. 203-218

• [Invited paper] S. Takagi*, M. Yokoyama, S.-H. Kim, N. Taoka and M. Takenaka : “Ultra-thin body III-V-On-Insulator MOSFETs on Si platform”, 15th International Conference on Thin Films (ICTF), Kyoto, Japan, 8-11, November (2011), O-S2-02, pp. 40

• R. Suzuki*, N. Taoka, S. Lee, S. H. Kim, T. Hoshii, M. Yokoyama, T. Yasuda, W. Jevasuwan, T. Maeda, O. Ichikawa, N. Fukuhara, M. Hata, M. Takenaka, and S. Takagi : “Improvement of HfO2/InGaAs Interfaces by ALD Temperature Control”, 2011 Semiconductor Interface Specialists Conference, 2011/12, Arlington, Virginia, USA, p. 25

• N. Taoka*, M. Yokoyama, S. H. Kim, R. Suzuki, R. Iida, S. Lee, T. Hoshii, W. Jevasuwan, T. Maeda, T. Yasuda, O. Ichikawa, N. Fukuhara, M. Hata, M. Takenaka, and S. Takagi : “Influence of Interface Traps inside Conduction Band on C-V Characteristics of InGaAs MOS Capacitors”, 2011 Semiconductor Interface Specialists Conference, 2011/12, Arlington, Virginia, USA, p.62

• N. Taoka*, M. Yokoyama, S. H. Kim, R. Suzuki, R. Iida, S. Lee, T. Hoshii, W. Jevasuwan, T. Maeda, T. Yasuda, O. Ichikawa, N. Fukuhara, M. Hata, M. Takenaka, and S. Takagi : “Impact of Fermi Level Pinning inside Conduction Band on Electron Mobility of InxGa1-xAs MOSFETs and Mobility Enhancement by Pinning Modulation”, 2011 International Electron Devices Meeting (IEDM), 2011/12, Washington, DC, USA, p. 610-613

<2010>

• S. H. Kim*, M. Yokoyama, N. Taoka, R. Iida, S. Lee, R. Nakane, Y. Urabe, N. Miyata, T. Yasuda, H. Yamada, N. Fukuhara, M. Hata, M. Takenaka and S. Takagi : “Self-aligned metal Source/Drain InxGa1-xAs n-MOSFETs using Ni-InGaAs alloy”, 2010 International Electron Devices Meeting (IEDM), 2010/12, San Francisco, CA, USA, p. 596-599

• S. Lee*, R. Iida, S. H. Kim, M. Yokoyama, N. Taoka, Y. Urabe, T. Yasuda, H. Takagi, H. Ishii, N. Miyata, H. Yamada, N. Fukuhara, M. Hata, M. Takenaka and S. Takagi : “InGaAs and InGaAs-On-Insulator n-Channel MOSFETs Fabricated by Self-Align Gate First Process with Ni/Al2O3 gate stacks”, 2010 International conference on Solid State Devices and Materials (SSDM), 2010/9, The University of Tokyo, Japan, p. 267-268

• M. Yokoyama*, R. Iida, S. H. Kim, N. Taoka, Y. Urabe, T. Yasuda, H. Takagi, H. Yamada, N. Fukuhara, M. Hata, M. Sugiyama, Y. Nakano, M. Takenaka, and S. Takagi : “Extremely-thin-body InGaAs-On-Insulator MOSFETs on Si fabricated by direct wafer bonding”, 2010 International Electron Devices Meeting (IEDM), 2010/12, San Francisco, CA, USA, p. 46-49

• N. Taoka*, M. Yokoyama, S. H. Kim, T. Hoshii, R. Iida, S. Lee, R. Suzuki, Y. Urabe, N. Miyata, T. Yasuda, H. Yamada, N. Fukuhara, M. Hata, M. Takenaka, and S. Takagi : “ALD Temperature Dependence of Slow Trap Properties at ALD-Al2O3/InP Interfaces”, 2010 Semiconductor Interface Specialists Conference, 2010/12, San Diego, CA, USA, p. 16

<2009>

• S. H. Kim*, S. Nakagawa, T. Haimoto, R. Nakane, M. Takenaka and S. Takagi : “Metal Source/Drain Inversion-mode InP MOSFETs”, The 67th Device Research Conference (DRC), 2009/6, The Pennsylvania State University, University Park, PA, USA, p. 115