​​

• S. Kang, I. -P. Roh, S. -H. Kim, M. -H. Kang, D. -M. Geum*, J -D. Song*, "High electron mobility in Metamorphic Epitaxial InAs0. 7Sb0. 3 Compounds and its pin photodetector", Journal of Alloys and Compounds, in press

​​

• Y. -J. Suh, J. Jeong, B. -H. Kim, S. -H. Kuk, S. -K. Kim, J. -P. Kim, S. -H. Kim*, "Large Polarization Of Hf0.5Zr0.5Ox Ferroelectric Film On InGaAs With Electric-Field Cycling And Annealing Temperature Engineering", IEEE Electron Device Letters 45, p. 766 (2024)

​

• S. -H. Kuk, S. -J. Choi, H. -Y. Kim, K. Ko, J. Jeong, D. -M. Geum, J. -H. Han, J. -H. Park, D. Jeon, S. -H. Kim*, "Heavily-Doped Channel Carrier Mobility in β-Ga2O3 Lateral Accumulation MOSFET", IEEE Transactions on Electron Devices 71, p. 3429 (2024)

​

• J. Jeong, J. Kim, J. -S. Lee, , Y. -J. Suh, N. Rheem, S. -K. Kim, J. Park, B. -H. Kim, J. -P. Kim, S. -Y. Park, S. -H. Kim*, "Impact of the channel thickness fluctuation on the subthreshold swing of InGaAs HEMTs at cryogenic temperature down to 4 K for ultra-low power LNAs", IEEE Transactions on Electron Devices 71, p. 3390 (2024) (Special issue for the extended paper of International Electron Devices Meeting (IEDM) 2023, recognized as the top-ranked student papers in IEDM 2023)

​

• S. -K. Kim, H. -R. Lim, J. -J. Jeong, S. -W. Lee, H. -J. Jeong, J. Park, J. -P. Kim, J. Jeong, B. -H. Kim, S. -Y. Ahn, Y. Park, D. -M. Geum, Y. Kim, Y. Baek, B. -J. Cho, S. -H. Kim*, "  Heterogeneous 3D Sequential CFETs with Ge (110) Nanosheet p-FETs on Si (100) bulk n-FETs", IEEE Transactions on Electron Devices 71, p. 393 (2024)