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• J. Jang, D. -M. Geum, I. -S. Kang, Y. -W. Oh, S. Jung, H. Cho, S. -H. Kim*, "Guided-mode resonance polarization-sensitive narrowband InGaAs photodetector", Laser & Photonics Review, accepted

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• S. -Y. Ahn+, J. Lim+, D. -M. Geum, D. Gwak, K. -K. Kang, J. -H. Eom, Y. -H. Kim, S. -H. Kim*, "Enhanced Broadband Quantum Efficiency in LWIR T2SL Detectors with Guided-Mode Resonance Structure", Optics Express, accepted

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• J. Jeong, S. -K. Kim, Y. -J. Suh, J. Lee, J. Choi, J. -P. Kim, B. -H. Kim, J. Park, J. Shim, N. Rheem, C. -J. Lee, Y. Jo, D. -M. Geum, S. -Y. Park, J. Kim, S. -H. Kim*, "to be revised", Nature communications, accepted

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• S. -H. Kuk, K. Ko, B. -H. Kim, J. -P. Kim, J. -H. Han, S. -H. Kim*, "Channel Mobility and Inversion Carrier Density in MFIS FEFET: Deep Insights into Device Physics for Non-Volatile Memory Applications", IEEE Journal of the Electron Device Society, in press

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• D. -M. Geum+, J. Lim+, J. Jang, S. -Y. Ahn, S. -K. Kim, J -S. Shim, B. -H. Kim, J. Park, W. -J. Baek, J. Jeong, S. -H. Kim*, "Highly-efficient (>70%) and Wide-spectral (400 nm -1700 nm) sub-micron-thick InGaAs photodiodes for future high resolution image sensors", Light: Science & Applications 13, 311 (2024)

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• M. Park, M. Seong, J, Jeong, S Lee, J, Song, H. Ko, G. -W. Lee, W. -S. Sul, W. -C. Lee, S. -H. Kim*, J. Lee*, "Silicon-based integrated passive device stack for III-V/Si monolithic 3D circuits operating on RF band", Solid State Electronics 221, 109012 (2024)

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• J. -P. Kim, H. -W. Kim, J. Jeong, J. Park, S.- H. Kuk, J. Kim, J. Woo, S. -H. Kim*, "BEOL-compatible 4F2 Oscillator using Vertical InGaAs Biristor for Highly Scalable Monolithic 3D Ising Solver", Small, 2406822 (2024)

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• ​I. Kim, J, Lim, J. -S. Shim, J. Park, S. -Y. Ahn, H. -R. Lim, S. -H. Kim*, "Free-standing Germanium photonic crystal waveguide for highly sensitive and compact mid-infrared on-chip gas sensor", ACS Sensors 9, p. 5116 (2024)

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• S. -H. Kuk, K. Ko, B. -H. Kim, H. -R. Lim, J. -P. Kim, J. -H. Han, S. -H. Kim*, "Channel Mobility with Higher-κ Doped-HfO2 for CMOS Logic", IEEE Transactions on Electron Devices 71, p. 6534 (2024)

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• J. Lim, J. Shim, I. Kim, S. -K. Kim, H. -R. Lim, S. -Y. Ahn, J. Park, D. -M. Geum, S. -H. Kim*, "Ultrasensitive mid-infrared optical gas sensor based on Germanium-on-insulator photonic circuits with limit-of-detection of sub-ppm level", ACS Photonics 11, p. 3907 (2024)​

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• J. Lim, J. -S. Shim, I. Kim, S. -K. Kim, D. -M. Geum, S. -H. Kim*, "Thermally Tunable Microring Resonators based on Germanium-on-Insulator for Mid-Infrared Spectrometer", APL Photonics 9, 106109 (2024)

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• HJ. Kim+, D. J. Kim+, J. P. Baek, W. J. Kim, S. -H. Kim, and T.-S. Kim*, "Intrinsic Thermo-Mechanical Properties of Freestanding TEOS-SiO2 Thin Films Depending on Thickness", ACS Applied Electronic Materials, 6, 5293-5300 (2024)

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• J. Jeong, S. -K. Kim, Y. -J. Suh, J. Shim, W. -J. Beak, S. -J. Choi, J. -P. Kim, B. -H. Kim, D. -M. Geum, J. Kim, S. -H. Kim*, "Thermal Studies of 3D Stacked InGaAs HEMTs and Mitigation Strategy of Self-Heating Effect using Buried Metal Insertion",  IEEE Transactions on Electron Devices 71, p. 4517 (2024)

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• J. Park+, E. -J. Youn+, W. -J. Baek, E. -K. Chu, H. -S. Kim, D. -M. Geum, J. -P. Kim, B. -H. Kim, S. -H. Kuk, H. -H. Park*, and S. -H. Kim*, "Size-dependent optoelectronic characteristics of InGaN/GaN red micro-LEDs on 4-inch Si substrates: High-resolution pixel arrays demonstration", Optics Express 32, p. 24242 (2024)

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• S. Kang, I. -P. Roh, S. -H. Kim, M. -H. Kang, D. -M. Geum*, J -D. Song*, "High electron mobility in Metamorphic Epitaxial InAs0. 7Sb0. 3 Compounds and its pin photodetector", Journal of Alloys and Compounds 989, 174255 (2024)

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• Y. -J. Suh, J. Jeong, B. -H. Kim, S. -H. Kuk, S. -K. Kim, J. -P. Kim, S. -H. Kim*, "Large Polarization Of Hf0.5Zr0.5Ox Ferroelectric Film On InGaAs With Electric-Field Cycling And Annealing Temperature Engineering", IEEE Electron Device Letters 45, p. 766 (2024)

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• S. -H. Kuk, S. -J. Choi, H. -Y. Kim, K. Ko, J. Jeong, D. -M. Geum, J. -H. Han, J. -H. Park, D. Jeon, S. -H. Kim*, "Heavily-Doped Channel Carrier Mobility in β-Ga2O3 Lateral Accumulation MOSFET", IEEE Transactions on Electron Devices 71, p. 3429 (2024)

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• J. Jeong, J. Kim, J. -S. Lee, , Y. -J. Suh, N. Rheem, S. -K. Kim, J. Park, B. -H. Kim, J. -P. Kim, S. -Y. Park, S. -H. Kim*, "Impact of the channel thickness fluctuation on the subthreshold swing of InGaAs HEMTs at cryogenic temperature down to 4 K for ultra-low power LNAs", IEEE Transactions on Electron Devices 71, p. 3390 (2024) (Special issue for the extended paper of International Electron Devices Meeting (IEDM) 2023, recognized as the top-ranked student papers in IEDM 2023)

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• S. -K. Kim, H. -R. Lim, J. -J. Jeong, S. -W. Lee, H. -J. Jeong, J. Park, J. -P. Kim, J. Jeong, B. -H. Kim, S. -Y. Ahn, Y. Park, D. -M. Geum, Y. Kim, Y. Baek, B. -J. Cho, S. -H. Kim*, "  Heterogeneous 3D Sequential CFETs with Ge (110) Nanosheet p-FETs on Si (100) bulk n-FETs", IEEE Transactions on Electron Devices 71, p. 393 (2024)