Journal papers published in 2011
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S. H. Kim*, M. Yokoyama, N. Taoka, R. Iida, S. Lee, R. Nakane, Y. Urabe, N. Miyata, T. Yasuda, H. Yamada, N. Fukuhara, M. Hata, M. Takenaka and S. Takagi : “High Performance Extremely Thin Body InGaAs-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors on Si Substrates with Ni-InGaAs Metal Source/Drain”, Applied Physics Express, Vol 4, 114201, 2011
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S. H. Kim*, M. Yokoyama, N. Taoka, R. Iida, S. Lee, R. Nakane, Y. Urabe, N. Miyata, T. Yasuda, H. Yamada, N. Fukuhara, M. Hata, M. Takenaka and S. Takagi : “Self-aligned metal source/drain InP n-metal-oxide-semiconductor field-effect transistors using Ni–InP metallic alloy”, Applied Physics Letters, Vol 98, 243501, 2011
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M. Yokoyama*, R. Iida, S.-H. Kim, N. Taoka, Y. Urabe, H. Takagi, T. Yasuda, H. Yamada, N. Fukuhara, M. Hata, M. Sugiyama, Y. Nakano, M. Takenaka and S. Takagi, “Sub-10-nm extremely-thin body InGaAs-on-insulator MOSFETs on Si wafers with ultrathin Al2O3 buried oxide layers”, IEEE Electron Device Letters, Vol 32, No. 9, p. 1218, 2011
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N. Taoka*, M. Yokoyama, S. H. Kim, T. Hoshii, R. Iida, S. Lee, R. Suzuki, Y. Urabe, N. Miyata, T. Yasuda, H. Yamada, N. Fukuhara, M. Hata, M. Takenaka, and S. Takagi : “AC Response Analysis of C-V Curves and Quantitative Analysis of Conductance Curves in Al2O3/InP Interfaces”, Microelectronic Engineering, Vol 88, Issue 7, p. 1087, 2011
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S. H. Kim*, M. Yokoyama, N. Taoka, R. Iida, S. Lee, R. Nakane, Y. Urabe, N. Miyata, T. Yasuda, H. Yamada, N. Fukuhara, M. Hata, M. Takenaka, and S. Takagi : "Self-algined metal Source/Drain InxGa1-xAs n-MOSFETs using Ni-InGaAs alloy", Applied Physics Express, Vol. 4, 024201, 2011