Next Generation Computing

Research topics

  • III-V/Ge MOSFETs

  • 3D stackable neuron, synapse

To reduce computing power, we are developing next-generation MOS devices using III-V, Ge, who have much better intrinsic transport characteristics than conventional Si. Not only beyond conventional CMOS under Von-Neumann architecture, we initiated the research on semiconductor devices for artificial neural network / neuromorphic computing. To realize the ultra-low computing, we are developing 3D stackable neuronal and synaptic devices, which would be ultimate device structure minimizing the power consumption in the interconnect as well as the power consumption for computing.

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34141 대전광역시 유성구 대학로 291 한국과학기술원(KAIST) 전기 및 전자공학부 E3-2, 1230호
TEL : 042-350-7552

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