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• S. -K. Kim, H. -R. Lim, J. -J. Jeong, S. -W. Lee, H. -J. Jeong, J. Park, J. -P. Kim, J. Jeong, B. -H. Kim, S. -Y. Ahn, Y. Park, D. -M. Geum, Y. Kim, Y. Baek, B. -J. Cho, S. -H. Kim*, "  Heterogeneous 3D Sequential CFETs with Ge (110) Nanosheet p-FETs on Si (100) bulk n-FETs", IEEE Transactions on Electron Devices, in press

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• J. Lim, J. Shim, I. Kim, S. -H. Kim*, "Experimental demonstration of microring resonator based on Germanium-on-insulator platform at mid-infrared range", Photonics Research 11, p. A80 (2023)

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• B- H. Kim, S. -H. Kuk, S. -K. Kim, J. -P. Kim, Y. -J. Suh, J. Jeong, C. -J. Lee, D. -M. Geum, Y. -J. Yoon, S. -H. Baek, S. -H. Kim*, "Low Operating Voltage and Immediate Read-After-Write of HZO-Based Si Ferroelectric Field-Effect Transistors with High Endurance and Retention Characteristics", Advanced Electronic Materials, 2300327 (2023)

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• M. Park, J. Song, J. Jeong, J. -T. Lim, J. -H. Song, W. -C. Lee, G. Sim, H. Cho, D. Yoo, M. Kang, H. Ko, J. Lee, K. Yang, C. -Y. Kim, Y. Kim, W. -S. Sul, S. -H. Kim, J. Lee*,  "200-mm Si CMOS Process-Compatible Integrated Passive Stack for Millimeter-Wave Monolithic 3-D integration", IEEE Transactions on Electron Devices 70, p. 5257 (2023)

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• S. -H. Kuk, S. Han, B. -H. Kim, J. -P. Kim, S. -K. Kim, S. -Y. Ahn, M. Park, J. -H. Han*, S. -H. Kim*, "Examination of Ferroelectric FET for “Cold” Nonvolatile Memory", IEEE Transactions on Electron Devices 70, p. 4122 (2023)

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• J. Jeon+, S. -H. Kuk+, A. -J. Cho, S. -H. Beak, S. -H. Kim*, S. -K. Kim*, "Memory window enhancement in n-type ferroelectric field-effect transistors by engineering ozone exposure in atomic layer deposition of HfZrOx films", Applied Physics Letters 122, 232906 (2023) 

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• J. Lim, J. Shim, I. Kim, S. -K. Kim, H. -R. Lim, S. -Y. Ahn, J. Park, D. -M. Geum, S. -H. Kim*, "Low-Loss and High-Confinement Photonic Platform based on Germanium-on-Insulator at Mid-Infrared Range for Optical Sensing", IEEE Journal of Lightwave Technology 41, p. 2824 (2023) (Supplementary material)

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• ​B. -H. Kim, S. -H. Kuk, S. -K. Kim, J. -P. Kim, Y. -J. Suh, J. Jeong, D. -M. Geum, S. -H. Baek, S. -H. Kim*, "Effect of Scandium Insertion into the Gate Stack of Ferroelectric Field-Effect Transistors", IEEE Transactions on Electron Devices 70, p. 1996 (2023)

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• J. Jeong, S. -K. Kim, J. Kim, D. -M. Geum, S.- H. Kim*, "Effects of Back Metal on the DC and RF Characteristics of 3D Stacked InGaAs RF Devices for Monolithic 3D RF Applications", IEEE Electron Device Letters 44, p. 598 (2023)

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• B- H. Kim, S. -H. Kuk, S. -K. Kim, J. -P. Kim, Y. -J. Suh, J. Jeong, D. -M. Geum, S. -H. Baek, S. -H. Kim*, "Oxygen Scavenging in HfZrOx-based n/p-FeFETs for Switching Voltage Scaling and Endurance/Retention Improvement", Advanced Electronic Materials, 2101257 (2023)

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• W. -J. Baek, J. -H. Park, J. Shim, B. -H. Kim, S. Park, H. -S. Kim, D. -M. Geum*, and S. -H. Kim*, "Ultra-Low-Current Driven InGaN Blue Micro Light-Emitting Diodes for Electrically Efficient and Self-Heating Relaxed Microdisplay​", Nature communications 14,  1386 (2023) (selected as an editor's highlight)

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• J. -P. Kim, S. -K. Kim, S. Park, S- H. Kuk, T. Kim, B. -H. Kim, S. -H. Ahn, Y. -H. Cho, Y. Jeong, S. -Y. Choi, S.- H. Kim*, Dielectric-Engineered High-speed, Low-power, Highly-reliable Charge Trap Flash-based Synaptic Device for Neuromorphic Computing Beyond Inference", Nano Letters 23, p. 451 (2023)

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• T. Jin†, S. -H. Kim†, J. -H. Han†, D. -H. Ahn, S. -U. An, T. -H. Noh, X. Sun, C. -J. Kim, J. Park, and Y. Kim*, "Demonstration of programmable light intensity of a micro-LED with a Hf-based ferroelectric ITZO TFT for Mura-free displays", Nanoscale Advances 5, p. 1316 (2023)

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• S. -H. Kuk, S. Han, D. -H. Lee, B. -H. Kim, J. -S. Shim, M. Park, J. -H. Han, S. -H. Kim*, "Logic and Memory Ferroelectric Field-Effect-Transistor Using Reversible and Irreversible Domain Wall Polarization", IEEE Electron Device Letters 44, p. 36 (2023)