• M. -S. Park, D. -M. Geum, J. H. Kyhm, J. D. Song, S. -H. Kim*, and W. J. Choi* : “InGaP/GaAs heterojunction phototransistors transferred to a Si substrate by metal wafer bonding combined with epitaxial lift-off”, Optics Express 23, p. 26888, 2015

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• H. –S. Kim, M. –S. Park, S. –H. Kim, S. –H. Kim, J. D. Song, Y. J. Lee, W. J. Choi*, and J. H. Park* : “Enhanced open-circuit voltage of InAs/GaAs quantum dot solar cells by hydrogen plasma treatment”, Journal of Vacuum Science & Technology B 33(4), 041401, 2015

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• M. Noguchi*, S. –H. Kim, M. Yokoyama, O. Ichikawa, T. Osada, M. Hata, M. Takenaka, S. Takagi : “High Ion/Ioff and low subthreshold slope planar-type InGaAs tunnel field effect transistors with Zn-diffused source junctions”, Journal of Applied Physics, Vol 118, 045712, 2015

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• S. -H. Kim, D. -M. Geum, M.-S. Park, C. –Z. Kim, and W. J. Choi* : “GaAs solar cell on Si substrate with good ohmic GaAs/Si interface by direct wafer bonding”, Solar Energy Materials & Solar Cells, Vol 141, p. 372, 2015

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• [Review paper] S. Takagi*, R. Zhang, J. Suh, S.-H. Kim, M. Yokoyama, K. Nishi, and M. Takenaka : “III–V/Ge channel MOS device technologies in nano CMOS era”, Japanese Journal of Applied Physics, Vol 54, 06FA01, 2015

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• S. -H. Kim, M.-S. Park, D. -M. Geum, H. Kim, G. Ryu, H. -D. Yang, J. D. Song, C. Z. Kim, W. J. Choi* : “Fabrication and characterization of single junction GaAs solar cell epitaxially grown on Si substrate”, Current Applied Physics 15, p. 40, 2015

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• S. -H. Kim*, D. -M. Geum, M.-S. Park, and W. J. Choi : “In0.53Ga0.47As-On-Insulator Metal-Oxide-Semiconductor Field-Effect-Transistors Utilizing Y2O3 Buried Oxide”, IEEE Electron Device Letters, Vol 36, p. 451, 2015