Congratulations to Song Hyeon, Jae Yong, Jun Sup, and Jae Ho for their work.

• S. –H. Kuk, S. -M. Han, B. -H. Kim, S. -H. Baek, J. -H. Han, S. -H. Kim*, “Comprehensive Understanding of the HZO-based n/pFeFET Operation and Device Performance Enhancement Strategy”, 2021 International Electron Devices Meeting (IEDM), 2021/12, San Francisco, CA, USA

• J. –Y. Jeong, S. -K. Kim, J. Kim, D. -M. Geum, S. -H. Kim, “Monolithic 3D Integrated InGaAs HEMTs on Si for Next-Generation Communication: Record fMAX and Relaxed Self-Heating of Top Devices by a Novel M3D Structure”, 2021 International Electron Devices Meeting (IEDM), 2021/12, San Francisco, CA, USA

• J. –S. Shim, J. -H. Lim, D. -M. Geum, J. -B. You, H. Yoon, J. Kim, W. -J. Baek, J. -H. Han, S. -H. Kim*, “TiOx/Ti/TiOx Tri-layer Film-based Waveguide Bolometric Detector for On-Chip Si Photonic Sensors”, 2021 International Electron Devices Meeting (IEDM), 2021/12, San Francisco, CA, USA (recognized as the top-ranked student papers in IEDM 2021)

• J. –K. Han (co-first), J. Sim (co-first), D. -M. Geum, S. -K. Kim, J. -M. Yu, J. Kim, S. -H. Kim*, Y. -K. Choi*, “3D Stackable Broadband Photoresponsive InGaAs Biristor Neuron for a Neuromorphic Visual System with Near 1 V Operation”, 2021 International Electron Devices Meeting (IEDM), 2021/12, San Francisco, CA, USA