Songhyeon won the Best Student Paper at the 2023 International Memory Workshop (IMW). IMW is an international conference dealing with technology development for memory technology. It is a competitive conference with an acceptance rate of around 30% (29% this year) and was held in Monterey, USA this year. Songhyeon's paper proposed the idea of using P-channel to reduce the performance degradation of the conventional ferroelectric field effect transistors (FET). It was suggested that the P-Channel ferroelectric FET could be a candidate for next-generation NAND flash memory with excellent performance, and in recognition of this value, Songhyeon won the Best student paper award.
